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Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

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Abstract

Sn-doped gallium oxide (Ga2O3:Sn) films were deposited on β-Ga2O3 (100) substrates by metal organic chemical vapor deposition method. The Sn concentration was varied from 1 to 12 % (atomic ratio). The influences of Sn-doping concentration on structure, raman, and photoelectric properties of the films were investigated in detail. The obtained films were monoclinic β-Ga2O3 homoepitaxial films. A decrease of about eight orders of magnitude in the film resistivity could be achieved through Sn doping. The 10 % Sn-doped film exhibited the best electrical properties and the lowest resistivity of about 1.20 × 10−1 Ω cm, with the hall mobility value of 12.03 cm2 V−1 s−1obtained. The average transmittances of the β-Ga2O3: Sn films in the visible and UV wavelength ranges were all over 85 %. The optical band gap of the films with different Sn-doping concentrations could be modulated from 4.16 to 4.69 eV.

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Acknowledgements

This work is financially supported by the National Natural Science Foundation of China (Grant No. 51072102).

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Authors and Affiliations

  1. School of Physics, Shandong University, Jinan, 250100, People’s Republic of China

    Xuejian Du, Zhao Li, Caina Luan, Weiguang Wang, Mingxian Wang, Xianjin Feng, Hongdi Xiao & Jin Ma

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  1. Xuejian Du
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  2. Zhao Li
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  3. Caina Luan
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  4. Weiguang Wang
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  5. Mingxian Wang
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  6. Xianjin Feng
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  7. Hongdi Xiao
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  8. Jin Ma
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Correspondence to Jin Ma.

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Du, X., Li, Z., Luan, C. et al. Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD. J Mater Sci 50, 3252–3257 (2015). https://doi.org/10.1007/s10853-015-8893-4

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  • DOI: https://doi.org/10.1007/s10853-015-8893-4

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