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Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD

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Abstract

Tin-doped gallium oxide (Ga2O3:Sn) films have been deposited on single crystalline MgO (100) substrates by metal organic chemical vapor deposition technique. The tin content was varied from 5 to 20 % (atomic ratio). After annealing in the atmosphere, all the samples show the β phase with the epitaxial relationship of β-Ga2O3 (\( \overline{6} 01 \)) ∥ MgO (100). The average transmittance for the annealed samples in visible range exceeds 89 %. The resistivity of the films doped with Sn can be effectively decreased by almost five orders of magnitude. A narrow and strong violet photoluminescence from 390 to 430 nm is observed at room temperature and this violet emission is enhanced after Sn-doping.

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Acknowledgments

This work is financially supported by the National Natural Science Foundation of China (Grant No. 51072102).

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Authors and Affiliations

  1. Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, TianJin University of Technology, Tianjin, 300384, People’s Republic of China

    Wei Mi

  2. School of Physics, Shandong University, Jinan, 250100, People’s Republic of China

    Wei Mi, Jin Ma, Zhao Li, Caina Luan & Hongdi Xiao

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  1. Wei Mi
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  2. Jin Ma
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  3. Zhao Li
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Correspondence to Wei Mi.

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Mi, W., Ma, J., Li, Z. et al. Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD. J Mater Sci: Mater Electron 26, 7889–7894 (2015). https://doi.org/10.1007/s10854-015-3440-2

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  • DOI: https://doi.org/10.1007/s10854-015-3440-2

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