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Synthesis and characterization of single crystalline GdB44Si2 nanostructures

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Abstract

GdB44Si2 is an excellent thermoelectric material, and nanostructured GdB44Si2 makes it possible to potentially improve its properties further. GdB44Si2 nanowires and nanobelts have been fabricated by chemical vapor deposition and characterized by electron diffraction and high-resolution electron microscopy. These nanostructures are of the YB50 structure and grew in the [010] direction. The nanowires have thickness of less than 100 nm and length of several tens of microns. The nanobelts have thickness of about a few tens of nanometers. Morphological and compositional analyses confirmed that the nanowire growth followed the vapor–liquid–solid mechanism and the nanobelts were formed by a subsequent vapor–solid process of condensation.

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Acknowledgements

This work is partially supported by the Development of System and Technology for Advanced Measurement and Analysis, Japan Science and Technology Corporation (JST) and the Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan.

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Authors and Affiliations

  1. National Institute for Materials Science, Sengen, Tsukuba, 305-0047, Japan

    Jinshi Yuan, Jie Tang, Norio Shinya & Yuexian Lin

  2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, 305-8577, Japan

    Jinshi Yuan, Jie Tang & Yuexian Lin

  3. International Center for Young Scientist, National Institute for Materials Science, Sengen, Tsukuba, 305-0047, Japan

    Han Zhang

  4. Department of Physics and Astronomy, Curriculum in Applied Sciences and Engineering, University of North Carolina at Chapel Hill, Chapel Hill, NC, 27599-3255, USA

    Lu-Chang Qin

Authors
  1. Jinshi Yuan
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  2. Han Zhang
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  3. Jie Tang
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  4. Norio Shinya
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  5. Yuexian Lin
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Correspondence to Jie Tang or Lu-Chang Qin.

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Yuan, J., Zhang, H., Tang, J. et al. Synthesis and characterization of single crystalline GdB44Si2 nanostructures. J Mater Sci 48, 1555–1561 (2013). https://doi.org/10.1007/s10853-012-6911-3

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  • DOI: https://doi.org/10.1007/s10853-012-6911-3

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