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Faceting mechanisms of Si nanowires and gold spreading

  • E-MRS MACAN
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Abstract

We report detailed structural analysis of 〈111〉 oriented silicon nanowires (NWs) grown by UHV–CVD using the VLS process with a gold catalyst. STEM-HAADF observations have revealed an unexpected inhomogeneous distribution of gold nanoclusters on the NW surface. Gold is mainly distributed on three sides among the six {112}-sidewalls and is anchored on upward {111} facets. This original observation brought us a new comprehension of the faceting mechanisms. The stability of the 〈111〉 growth direction needs the formation of facets on {112}-sidewalls with energetically favorable planes. We demonstrate that the initial formation of covered facets with a three-fold symmetry is driven by the formation of {111} Au/Si interfaces between the nucleated Si NW and the Au droplet.

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Acknowledgements

The authors are grateful to the “Centrale de Technologie Universitaire” MINERVE for technological backup.

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Authors and Affiliations

  1. Univ Paris-Sud, Institut d’Electronique Fondamentale, UMR 8622, F-91405, Orsay, France

    Laetitia Vincent, Rym Boukhicha, Cyrille Gardès, Charles Renard, Vy Yam, Frédéric Fossard & Daniel Bouchier

  2. CNRS, F-91405, Orsay, France

    Laetitia Vincent, Rym Boukhicha, Cyrille Gardès, Charles Renard, Vy Yam, Frédéric Fossard & Daniel Bouchier

  3. CNRS, Laboratoire de Photonique et de Nanostructures, UPR20, Site Alcatel de Marcoussis, Route de Nozay, F-91460, Marcoussis, France

    Gilles Patriarche

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  1. Laetitia Vincent
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  2. Rym Boukhicha
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  4. Charles Renard
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  5. Vy Yam
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  8. Daniel Bouchier
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Correspondence to Laetitia Vincent.

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Vincent, L., Boukhicha, R., Gardès, C. et al. Faceting mechanisms of Si nanowires and gold spreading. J Mater Sci 47, 1609–1613 (2012). https://doi.org/10.1007/s10853-011-5939-0

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  • DOI: https://doi.org/10.1007/s10853-011-5939-0

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