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Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

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Abstract

High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 × 10−5 atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 μm−2 to 80 μm−2) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (< 40 nm) InAs NWs.

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    Authors and Affiliations

    1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 300, Taiwan

      Hung Wei Yu, Deepak Anandan,  Ramesh Kumar Kakkerla, Minh Thien Huu Ha,  Sa Hoang Huynh, Yung Yi Tu & Edward Yi Chang

    2. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, 300, Taiwan

      Ching Yi Hsu & Edward Yi Chang

    3. Institute of Photonic System, National Chiao Tung University, 1001 University Road, Hsinchu, 300, Taiwan

      Yu Chih Hung

    4. National Nano Device Laboratories, No.26 Prosperity Rd. I, Science Park, Hsinchu, 300, Taiwan

      Chun Jung Su & Chien Ting Wu

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    1. Hung Wei Yu
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    Correspondence to Edward Yi Chang.

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    Hung Wei Yu and Deepak Anandan have contributed equally to this work.

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    Yu, H.W., Anandan, D., Hsu, C.Y. et al. Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate. J. Electron. Mater. 47, 1071–1079 (2018). https://doi.org/10.1007/s11664-017-5878-x

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    • DOI: https://doi.org/10.1007/s11664-017-5878-x

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