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Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study

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Abstract

The strain and stress build-up in 20-keV He-implanted UO2 single crystals have been determined by means of X-ray diffraction through reciprocal space mapping, with the use of a model dedicated to the analysis of the strain/stress state of ion-irradiated materials. Results indicate that the undamaged part of the crystals exhibits no strain or stress; on the other hand, the implanted layer undergoes a tensile strain directed along the normal to the surface of the crystals and a compressive in-plane stress. The build-up of both strain and stress with He fluence exhibits a two-step process: (i) a progressive increase up to a maximum level of ~1% for the strain and ~−2.8 GPa for the stress, followed by (ii) a dramatic decrease. The origin of the strain and stress build-up is the formation of both self-interstitial defects and small He-vacancy clusters. The strain, and stress relief is tentatively attributed to the formation of extended defects (such as dislocations) that induce a plastic relaxation.

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Acknowledgements

Ion implantation was performed with the IRMA implantor of the CSNSM-Orsay, and we are thus grateful to the Semiramis staff for their help during these implantations. This study is supported by the Programme sur l’Aval du Cycle et l’Energie Nucléaire (PACEN), and it was partially financed by the “Groupement National de Recherche” (GNR) MATINEX.

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Authors and Affiliations

  1. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM-UMR 8609), CNRS-IN2P3-Université Paris-Sud, Bâtiment 108, 91405, Orsay Cedex, France

    Aurélien Debelle, Frédérico Garrido & Lionel Thomé

  2. Science des Procédés Céramiques et de Traitements de Surface CNRS UMR 6638, Centre Européen de la Céramique, 12 rue Atlantis, 87068, Limoges, France

    Alexandre Boulle

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  1. Aurélien Debelle
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  2. Alexandre Boulle
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  4. Lionel Thomé
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Correspondence to Aurélien Debelle.

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Debelle, A., Boulle, A., Garrido, F. et al. Strain and stress build-up in He-implanted UO2 single crystals: an X-ray diffraction study. J Mater Sci 46, 4683–4689 (2011). https://doi.org/10.1007/s10853-011-5375-1

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