Skip to main content
SpringerLink
Log in

Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing

  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

Undoped n-type MgZnO films were deposited on c-plane sapphire substrates by molecular-beam epitaxy and subsequently annealed in O2 at different pressures. After annealing at 3.03 × 105 Pa, oxygen content in the annealed films show increases and the films transform into p-type conduction. However, the decreases of oxygen content and the increases of electron concentration were obtained while the films annealed at 1.01 × 105 Pa or 2.05 × 10−3 Pa. The changes in intensity of the emission peak located at 2.270 eV are similar to the changes of the oxygen content in the films annealed at different pressures. According to the defect levels and the relationship between photoluminescence spectra and annealing condition, it was suggested that this emission peak was related to interstitial oxygen (Oi). The obtained p-type conduction is attributed to that the Oi acceptor can compensate oxygen vacancy and interstitial zinc donor.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4

Similar content being viewed by others

References

  1. Tang ZK, Wong GKL, Yu P (1998) Appl Phys Lett 72:3270

    Article  CAS  ADS  Google Scholar 

  2. Wong EM, Searson PC (1999) Appl Phys Lett 7:2939

    Article  ADS  Google Scholar 

  3. Kawasaki M, Ohtomo A, Ohkubo I, Koinuma H, Tang ZK, Yu P, Wang GKL, Zhang BP, Segawa Y (1998) Mater Sci Eng B 56:239

    Article  Google Scholar 

  4. Bagnall DM, Chen YF, Zhu Z, Yao T, Koyama S, Shen MY, Goto T (1997) Appl Phys Lett 70:2230

    Article  CAS  ADS  Google Scholar 

  5. Iwata K, Fons P, Yamada A, Matsubara K, Niki S (2000) J Cryst Growth 209:526

    Article  CAS  ADS  Google Scholar 

  6. Reynolds DC, Look DC, Jogai B (1996) Solid State Commun 99:873

    Article  CAS  ADS  Google Scholar 

  7. Vispute RD, Talyansky V, Choopun S, Downes M, Sharma RP, Venkatesan T, Wood MC, Lareau RT, Jones KA, Iliadis AA (1997) Appl Phys Lett 70:2735

    Article  CAS  ADS  Google Scholar 

  8. Look DC (2001) Mater Sci Eng B 80:383

    Article  Google Scholar 

  9. Narayan J, Dovidenko K, Sharma AK, Oktyabrsky S (1998) J Appl Phys 84:2597

    Article  CAS  ADS  Google Scholar 

  10. Vispute RD, Talyansky V, Choopun S, Sharma RP, Venkatesan T, He M, Tang X, Halpern JB, Spencer MG, Li YX, Salamanca-Riba LG, Iliadis AA, Jones KA (1998) Appl Phys Lett 73:348

    Article  CAS  ADS  Google Scholar 

  11. Ohtomo A, Kawasaki M, Koida T, Masubuchi K, Koinuma H, Sakurai Y, Yoshida Y, Yasuda T, Segawa Y (1998) Appl Phys Lett 72:2466

    Article  CAS  ADS  Google Scholar 

  12. Sun JW, Lu YM, Liu YC, Shen DZ, Zhang ZZ, Li BH, Zhang JY, Yao B, Zhao DX, Fan XW (2007) J Phys D Appl Phys 40:6541

    Article  CAS  ADS  Google Scholar 

  13. Ghosh R, Basak D (2007) J Mater Sci Mater Electron 18:S141

    Article  CAS  Google Scholar 

  14. Kang SW, Kim YY, Ahn CH, Mohanta SK, Cho HK (2008) J Mater Sci Mater Electron 19:755

    Article  CAS  Google Scholar 

  15. Ghosh R, Mridha S, Basak D (2009) J Mater Sci Mater Electron 20:S371

    Article  Google Scholar 

  16. Minegishi, Koiwai Y, Kikuchi Y, Yano K, Kasuga M, Shimizu A (1997) Jpn J Appl Phys 36:1453

    Article  ADS  Google Scholar 

  17. Wei ZP, Yao B, Zhang ZZ, Lu YM, Shen DZ, Li BH, Wang XH, Zhang JY, Zhao DX, Fan XW, Tang ZK (2006) Appl Phys Lett 89:102104

    Article  ADS  Google Scholar 

  18. Yao B, Xie YP, Cong CX, Zhao HJ, Sui YR, Yang T, He Q (2009) J Phys D Appl Phys 42:015407

    Article  ADS  Google Scholar 

  19. Wang P, Chen NF, Yin ZG, Dai RX, Bai YM (2006) Appl Phys Lett 86:202102

    Article  ADS  Google Scholar 

  20. Qiu MX, Ye ZZ, He HP, Zhang YZ, Gu XQ, Zhu LP, Zhao BH (2007) Appl Phys Lett 90:182116

    Article  ADS  Google Scholar 

  21. Shi ZL, Liu DL, Yan XL, Gao ZM, Bai SY (2008) Microelectron J 39:1583

    Article  CAS  Google Scholar 

  22. Li YF, Yao B, Lu YM, Wei ZP, Gai YQ, Zheng CJ, Zhang ZZ, Li BH, Shen DZ, Fan XW, Tang ZK (2007) Appl Phys Lett 91:232115

    Article  ADS  Google Scholar 

  23. Zhang X, Li XM, Chen TL, Zhang CY, Yu WD (2005) Appl Phys Lett 87:092101

    Article  ADS  Google Scholar 

  24. Xiong G, Wilkinson J, Mischuck B, Tüzemen S, Ucer KB, Williams RT (2002) Appl Phys Lett 80:1195

    Article  CAS  ADS  Google Scholar 

  25. Zeng YJ, Ye ZZ, Xu WZ, Lu JG, He HP, Zhu LP, Zhao BH, Che Y, Zhang SB (2006) Appl Phys Lett 8:262103

    Article  ADS  Google Scholar 

  26. Choopun S, Vispute RD, Noch W, Balsamo A, Sharma RP, Venkatesan T, Iliadis A, Look DC (2006) Appl Phys Lett 75:3947

    Article  ADS  Google Scholar 

  27. Park SH, Hanada T, Oh DC, Minegishi T, Goto H, Fujimoto G, Park JS, Im IH, Chang JH, Cho MW, Yao T (2007) Appl Phys Lett 91:231904

    Article  ADS  Google Scholar 

  28. Bylander EG (1978) J Appl Phys 49:1188

    Article  CAS  ADS  Google Scholar 

  29. Vanheusden K, Seager CH, Warren WL, Tallant DR, Voiget JA (1996) Appl Phys Lett 68:403

    Article  CAS  ADS  Google Scholar 

  30. Liu M, Kitai AH, Mascher P (1992) J Lumin 54:35

    Article  CAS  Google Scholar 

  31. Bo FH, Yan YS, Feng ZP, Yuan WH, Lin LX, Mei C, Sheng ZQ, Hai CY, Guo WZ (2007) Chin Phys Lett 24:2108

    Article  ADS  Google Scholar 

  32. Ahn K-S, Deutsch T, Yan YF, Jiang C-S, Perkins CL, Turner J, Al-Jassim M (2007) J Appl Phys 102:023517

    Article  ADS  Google Scholar 

  33. SunYM (2000) PhD thesis, University of Science and Technology of China, July 2000

  34. Lin BX, Fu ZX, Jia YB, Liao GH (2001) J Electrochem Soc 144:G110

    Article  Google Scholar 

Download references

Acknowledgement

This work is supported by the Key Project of the National Natural Science Foundation of China under grant no. 50532050; The Knowledge Innovation Program of the Chinese Academy of Sciences (NO.KJCX3.SYW.W01); The National Natural Science Foundation of China (Nos. 60776011, 60806002 and 10874178). The authors would like to thank Dr. H. F Zhao for useful discussions and advice. The authors also would like to acknowledge financial support through Swedish Research Links via VR.

Author information

Authors and Affiliations

  1. Key Laboratory of Excited State Processes, Chinese Academy of Sciences, No. 16, Dong Nanhu Road, Changchun, 130033, China

    W. W. Liu, B. Yao, Y. F. Li, B. H. Li, Z. Z. Zhang, C. X. Shan, J. Y. Zhang, D. Z. Shen & X. W. Fan

  2. Graduate School of the Chinese Academy of Science, Beijing, 100049, China

    W. W. Liu & Y. F. Li

Authors
  1. W. W. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. B. Yao
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Y. F. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. H. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Z. Z. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. C. X. Shan
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. J. Y. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. D. Z. Shen
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. X. W. Fan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to B. Yao.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Liu, W.W., Yao, B., Li, Y.F. et al. Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing. J Mater Sci 45, 6206–6211 (2010). https://doi.org/10.1007/s10853-010-4714-y

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10853-010-4714-y

Keywords

Search

Navigation