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Quantitative evaluation of high temperature deformation mechanisms: a specific microgrid extensometry technique coupled with EBSD analysis

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Abstract

A microgrid extensometry method has been developed and used to obtain information about intragranular and intergranular creep mechanisms. An oxide grid was deposited on a creep specimen using an electron lithography technique. This oxide grid offers high backscattered electron contrast and can withstand long duration creep tests under vacuum in the 700–850 °C range without degradation. Specific methods were used to measure in-plane displacements at the grid nodes or at the grain boundaries using correlation of grid images taken before and after the creep test. The local strain and grain boundary sliding (GBS) data were then calculated. Combined information about grain boundary crystallography and GBS has been obtained by superimposing the electron backscattered diffraction (EBSD) map on the deformation maps. To illustrate the potential of this set of processes, two examples of application on a nickel-base disc superalloy are presented. The first one concerns the influence of the creep temperature on the local strain and the GBS. The second application quantitatively shows the influence of grain boundary character on GBS of this material.

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Author notes

  1. A. Soula

    Present address: Michelin, site de Ladoux, 63040, Clermont-Ferrand Cedex 9, France

Authors and Affiliations

  1. Département des Matériaux et Structures Métalliques, Office National d’Études et de Recherches Aérospatiales (ONERA), BP 72, 92322, Châtillon Cedex, France

    A. Soula, D. Locq, D. Boivin, Y. Renollet & P. Caron

  2. SIMaP, BP 75, 38402, St Martin d’Hères Cedex, France

    Y. Bréchet

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  1. A. Soula
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  2. D. Locq
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  3. D. Boivin
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  4. Y. Renollet
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  5. P. Caron
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  6. Y. Bréchet
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Correspondence to D. Locq.

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Soula, A., Locq, D., Boivin, D. et al. Quantitative evaluation of high temperature deformation mechanisms: a specific microgrid extensometry technique coupled with EBSD analysis. J Mater Sci 45, 5649–5659 (2010). https://doi.org/10.1007/s10853-010-4630-1

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  • DOI: https://doi.org/10.1007/s10853-010-4630-1

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