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The effect of annealing time on r.f. magnetron sputtered La3Ga5SiO14 films

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Abstract

La3Ga5SiO14 (LGS) thin films have been grown by r.f. sputtering at 600 °C on (200)-textured MgO buffer layers deposited also by r.f. sputtering on Si substrates. The evolution of crystalline phases in the thin films as a function of time was examined by X-ray diffraction and scanning electron microscopy before and after annealing in air for various times. The morphology of the crystals formed and their formation mechanism were discussed.

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Acknowledgements

The authors express our thanks to W.-Y. Wei for discussion and advices. Financial support by National Science Council, Taiwan, the Republic of China under Contract No. NSC 92-2216-E-036-015 is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Materials Engineering, Tatung University, 40 ChungShan North Road, 3rd Section, Taipei, 104, Taiwan, ROC

    Feng-Wei Wang, Yi Hu & Hur-Lon Lin

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  1. Feng-Wei Wang
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  2. Yi Hu
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  3. Hur-Lon Lin
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Correspondence to Yi Hu.

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Wang, FW., Hu, Y. & Lin, HL. The effect of annealing time on r.f. magnetron sputtered La3Ga5SiO14 films. J Mater Sci 42, 7307–7310 (2007). https://doi.org/10.1007/s10853-007-1587-9

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  • DOI: https://doi.org/10.1007/s10853-007-1587-9

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