Abstract
In this work we are discussing RF magnetron sputter deposition of Sb2S3 thin films, postdeposition thermal processing, and the material characterization. After thermal treatment at 300 °C in N2/S environment, films were crystallized in orthorhombic structure, which was determined by XRD and Raman spectroscopy. Crystallite size, lattice parameters, strain, texture coefficient and degree of preferred orientation are reported. AFM and SEM images of the annealed films revealed a compact and uniform surface, composed of grains of large-size in the order of micrometers and well-defined rhombic geometry. Elemental analysis by EDXS showed a slight sulfur excess in the films. Optical properties and electronic band to band transitions were determined by spectroscopic ellipsometry. The dielectric function of Sb2S3 films was well represented by a Tauc–Lorentz and Lorentz oscillator models collection. Optical constants n and k revealed notable differences caused by thermal treatment, which are consistent with amorphous (as deposited) and polycrystalline (annealed) film properties, such as increase in E g and lowering of n and k values. The optical band gap of the annealed films from the ellipsometric measurements was in the range of 1.63–1.7 eV with an absorption coefficient larger than 104 cm−1 in the above band gap region. The films showed p-type conductivity and photo-response.
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H. Koc, A.M. Mamedov, E. Deligoz, H. Ozisik, Sol. State Sci. 14, 1211 (2012)
L.P. Deshmukh, S.G. Holikatti, B.P. Rane, B.M. More, P.P. Hankare, J. Electrochem. Soc. 141, 1779 (1994)
A.M. Salem, M. Soliman Selim, J. Phys. D Appl. Phys. 34, 12 (2001)
R.S. Mane, C.D. Lokhande, Mater. Chem. Phys. 82, 347 (2003)
H. Maghraoui-Meherzi, T. Ben Nasr, N. Kamoun, M. Dacharoui, Phys. B 405, 3101 (2010)
F. Perales, G. Lifante, F. Agullo-Rueda, C. de las Heras, J. Phys. D Appl. Phys. 40, 2440 (2007)
F. Aousgi, M. Kanzari, Curr. Appl. Phys. 13, 262 (2013)
M. Haj Lakhdar, B. Ouni, M. Amlouk, Optik 125, 2295 (2014)
R. Boughalmi, A. Boukhachem, M. Kahlaoui, H. Maghraoui, M. Amlouk, Mater. Sci. Semicond. Proc. 26, 593 (2014)
K.Y. Rajpure, C.H. Bhosale, J. Phys. Chem. Solids 61, 561 (2000)
A.A. El-Shazly, M.A.M. Seyam, M.M. El-Samanoudy, A.H. Ammar, E.M. Assim, Appl. Surf. Sci. 189, 129 (2002)
S. Mahanty, J.M. Merino, M. León, J. Vac. Sci. Technol. A 15, 3060 (1997)
K.Y. Rajpure, C.H. Bhosale, Mater. Chem. Phys. 73, 6 (2002)
J. Escorcia-Garcia, D. Becerra, M.T.S. Nair, P.K. Nair, Thin Sol. Film. 569, 28 (2014)
V.V. Killedar, C.D. Lokhande, C.H. Bhosale, Mater. Chem. Phys. 47, 104 (1997)
S. Zhang, H. Wan, L. Xu, W. Huang, G. Huang, Long Jin-Ping, P. Peng, Int. J. Mod. Phys. B 28, 1450150 (2014)
O. Savadogo, K.C. Mandal, Appl. Phys. Lett. 63, 228 (1993)
S. Messina, M.T.S. Nair, P.K. Nair, Thin Sol. Film. 517, 2503 (2009)
K.F. Abd-El-Rahman, A.A.A. Darwish, Curr. Appl. Phys. 11, 1265 (2011)
M.Y. Versavel, J.A. Haber, Thin Sol. Film. 515, 7171 (2007)
J.N. Hilfiker, R.A. Synowicki, H.G. Tompkins, Soc. Vac. Coat. 505, 511 (2008)
D. R. Askeland, P. P. Fulay, W. J. Wright, The Science and Engineering of Materials, 6th edn. (Cengage Learning, Stamford, CT, 2011), p. 921
R.E. Dinnebier, S.J.L. Billinge, Powder Diffraction, Theory and Practice (RSC Publishing, Cambridge, 2008), p. 142
D. Gupta, Diffusion Processes in Advanced Technological Materials (Springer, New York, 2005), p. 374
M. Kang, S.W. Kim, Y. Kim, J. Ryu, J. Korean Phys. Soc. 57, 389 (2010)
C.S. Barret, T.B. Massalski, Structure of Metals: Crystallographic Methods, Principles, and Data, 3rd edn. (McGraw Hill, New York, 1996), p. 205
H.R. Moutinho, M.M. Al-Jassim, D.H. Levi, P.C. Dippo, L.L. Kazmerski, J. Vac. Sci. Technol. A 16, 1251 (1998)
S. Kharbish, E. Libowitzky, A. Beran, Eur. J. Mineral. 21, 325 (2009)
P. Makreski, G. Petrusevski, S. Ugarkovic, G. Jovanovski, Vib. Spectrosc. 68, 177 (2013)
P.G. Sheikhiabadi, M. Salavati-Niasari, F. Davar, Mater. Lett. 71, 168 (2012)
M. Salavati-Niasari, D. Ghanbari, F. Davar, J. Alloy. Compd. 488, 442 (2009)
M. Yousefi, M. Sabet, M. Salavati-Niasari, H. Emadi, J. Clust. Sci. 23, 511 (2012)
G.E. Jellison Jr., F.A. Modine, Appl. Phys. Lett. 69, 371 (1996)
Erratum, Jellison, Jr., F. A. Modine Appl. Phys. Lett. 69, 2137 (1996)
M. Schubert, T. Hofmann, C.M. Herzinger, W. Dollase, Thin Sol. Film. 455–456, 619 (2004)
D.V. Likhachev, N. Malkova, L. Poslavsky, Thin Sol. Film. 589, 844 (2015)
Md Mosaddeq-ur-Rahman, G. Yu, K.M. Krishna, T. Soga, J. Watanabe, T. Jimbo, M. Umeno, Appl. Optics 37, 691 (1998)
S. Faÿ, L. Feitknecht, R. Schlüchter, U. Kroll, E. Vallat-Sauvain, A. Shah, Sol. Energ. Mat. Sol. C. 90, 2960 (2006)
S. Faÿ, J. Steinhauser, S. Nicolay, C. Ballif, Thin Sol. Film. 518, 2961 (2010)
M. Haj Lakhdar, B. Ouni, M. Amlouk, Mater. Sci. Semicond. Process. 19, 32 (2014)
Acknowledgments
The authors thank Maria Luisa Ramón for XRD measurements; José Campos Alvarez for SEM images, EDXS measurements and general assistance; Gildardo Casarrubias Segura for technical assistance in sputtering and AFM equipments, and Raúl Sánchez Zeferino (UNISON, México) for Raman measurements. This work at IER-UNAM was partially supported by the project CeMIE-Sol 207450/P28. Medina-Montes thanks the postdoctoral fellowship of UNAM.
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Medina-Montes, M.I., Montiel-González, Z., Paraguay-Delgado, F. et al. Structural, morphological and spectroscopic ellipsometry studies on sputter deposited Sb2S3 thin films. J Mater Sci: Mater Electron 27, 9710–9719 (2016). https://doi.org/10.1007/s10854-016-5033-0
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DOI: https://doi.org/10.1007/s10854-016-5033-0