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Dielectric properties of B2O3 doped Sm(Co1/2Ti1/2)O3 ceramics at microwave frequency

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Abstract

The microwave dielectric properties and the microstructures of Sm(Co1/2Ti1/2)O3 ceramics with B2O3 additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co1/2Ti1/2)O3 exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of Sm(Co1/2Ti1/2)O3 ceramics with low sintering temperature. It is found that Sm(Co1/2Ti1/2)O3 ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B2O3 addition. At 1,290 °C, Sm(Co1/2Ti1/2)O3 ceramics with 0.5 wt% B2O3 addition possess a dielectric constant (ε r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τf) of −11.4 ppm/ °C. The B2O3-doped Sm(Co1/2Ti1/2)O3 ceramics can find applications in microwave devices requiring low sintering temperature.

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Acknowledgement

This work was supported by the National Science Council of the Republic of China under grant NSC93-2213-E-006-038.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Cheng Kung University, 1 University Rd., Tainan, 70101, Taiwan

    Hong-Tie Soong, Cheng-Liang Huang & Ming-Ta Kuo

  2. Department of Electrical Engineering, National United University, No. 1, Lien-Da, Kung-Ching Li,, Miao-Li, 36003, Taiwan

    Cheng-Hsing Hsu

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  1. Hong-Tie Soong
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  2. Cheng-Hsing Hsu
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Correspondence to Cheng-Hsing Hsu.

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Soong, HT., Hsu, CH., Huang, CL. et al. Dielectric properties of B2O3 doped Sm(Co1/2Ti1/2)O3 ceramics at microwave frequency. J Mater Sci 42, 2393–2398 (2007). https://doi.org/10.1007/s10853-006-1270-6

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  • DOI: https://doi.org/10.1007/s10853-006-1270-6

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