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Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2

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Abstract

The microwave dielectric properties of ZnO–B2O3–SiO2 (ZBS)-doped La(Mg0.5Sn0.5)O3 ceramics were investigated with a view to their application in microwave devices. ZBS-doped La(Mg0.5Sn0.5)O3 ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of ZBS-doped La(Mg0.5Sn0.5)O3 ceramics exhibited no significant variation of phase with sintering temperature. By adding 2.0 wt% ZBS, a dielectric constant of 19.14, a quality factor (Q × f) of 35,800 GHz, and a temperature coefficient of resonant frequency τ f (−86 ppm/°C) were obtained when La(Mg0.5Sn0.5)O3 ceramics were sintered at 1,400 °C for 4 h.

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Acknowledgments

This work was supported by the National Science Council in Taiwan under grant NSC 99-2622-E-262-003.

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Authors and Affiliations

  1. Department of Electrical Engineering, Lunghwa University of Science and Technology, Gueishan Shiang, Taoyuan County, Taiwan

    Yih-Chien Chen & Chih-Hung Li

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  1. Yih-Chien Chen
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  2. Chih-Hung Li
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Correspondence to Yih-Chien Chen.

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Chen, YC., Li, CH. Improvement in microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by applying ZnO–B2O3–SiO2 . J Mater Sci: Mater Electron 25, 4312–4318 (2014). https://doi.org/10.1007/s10854-014-2167-9

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  • DOI: https://doi.org/10.1007/s10854-014-2167-9

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