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Properties of GaAs films deposited by pulse periodic technique

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Abstract

GaAs is a III-V compound possessing high mobility and a direct band gap of 1.43 eV , making it a very suitable candidate for photovoltaic applications. Thin GaAs films were prepared at room temperature by plating an aqueous solution containing GaCl3 and As2O3 at a pH of 2. The current density was kept as 50 mA cm−2 and the duty cycle was varied in the range 10–50%. The films were deposited on titanium and tin oxide coated glass substrates. Films exhibited polycrystalline nature with peaks corresponding to single phase GaAs. Optical absorption measurements indicated a direct band gap of 1.40 eV. The surface roughness of the films varied from 3 nm to 6 nm as the duty cycle increased. Raman spectra indicated both the LO and TO phonons for the films deposited at duty cycles above 25%. Photoelectrochemical studies indicated that the current and voltage output are higher than earlier reports on thin film electrodes.

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  1. Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi, 630 006, India

    K. R. Murali

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  1. K. R. Murali
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Correspondence to K. R. Murali.

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Murali, K.R. Properties of GaAs films deposited by pulse periodic technique. J Mater Sci 42, 1321–1324 (2007). https://doi.org/10.1007/s10853-006-1192-3

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  • DOI: https://doi.org/10.1007/s10853-006-1192-3

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