Abstract
Polycrystalline thin films of Ti-doped indium oxide (indium–titanium-oxide, ITiO) were prepared by d.c. magnetron sputtering and their electrical and optical properties were investigated. Doping of Ti was effective in improvement of the electroconductivity of the indium oxide: the electrical resistivity of 1.7 × 10−3 Ω cm of non-doping decreased to minimum value of 1.8 × 10−4 Ω cm at 2.4 at.% Ti-doping when the films were deposited at 300 °C. The polycrystalline ITiO films of 0.8–1.6 at. % Ti-doping showed the high Hall mobilitiy (82–90 cm2 V−1 s−1) and the relatively low carrier density (2.4–3.5 × 1020 cm−3) resulting in characteristics of both low resistivity (2.1–3.0 × 10−4 Ω cm) and high transmittance in the near-infrared region (over 80% at 1550 nm), which cannot be shown in the conventional Sn-doped indium oxide (ITO) films.
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Abe, Y., Ishiyama, N. Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target. J Mater Sci 41, 7580–7584 (2006). https://doi.org/10.1007/s10853-006-0844-7
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DOI: https://doi.org/10.1007/s10853-006-0844-7