Abstract
Sn-microdoped indium-zinc-oxide (IZO) films were deposited on glass and polyimide (PI) substrates by using DC magnetron sputtering with single targets with Sn concentrations of 0, 800, and 2000 ppm. The films with a thickness of 50 nm were deposited at room temperature (RT) and then post-annealed at different temperatures (RT-220 °C) in air or vacuum for 1 h. The 800-ppm Sn-doped IZO films post-annealed at 220 °C in vacuum exhibited a relatively low resistivity (3.957 × 10−4 Ω·cm) and showed a high transmittance at 550 nm. The transmittance and the resistivity changes induced by post-annealing were similar to those of non-Sn-doped films. Moreover, the mechanical properties were also highly advantageous. Sn-microdoping of amorphous IZO thin films improves their electrical properties and prevents degradation of their mechanical and optical properties at sufficient doping levels.
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Kim, D., Kim, M. & Song, P. Characteristics of micro-quantity Sn addition to amorphous indium–zinc–oxide thin films deposited by using DC magnetron sputtering. Journal of the Korean Physical Society 67, 1056–1063 (2015). https://doi.org/10.3938/jkps.67.1056
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DOI: https://doi.org/10.3938/jkps.67.1056