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Dielectric and piezoelectric properties of (0.90-x) PIN-xPT-0.10PZ ternary system near morphotropic phase boundary

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Abstract

The (0.90-x)Pb(In1/2Nb1/2)O3-xPbTiO3-0.10PbZrO3 (PINTZ10) ceramics are prepared by solid state reaction and their structural, dielectric and piezoelectric properties near morphotrophic phase boundary (MPB) has been examined systematically. The structure undergoes a gradual change from rhombohedral to tetragonal when the PbTiO3 content (x) is increased. From the frequency and temperature dependent dielectric measurement it is found that the dielectric relaxation (ΔT) decreases with Ti4+ substitution. Even though the MPB of this ternary system is formed with lower PT content (0.62PIN-0.28PT-0.10PZ), the substitution of Zr4+ in the B site maintains the transition temperature (Tm) at 300 °C resembling its binary, 0.67PIN-0.37PT. The higher saturation polarization obtained for x = 0.27 and the high piezoelectric co-efficient obtained for x = 0.29 substantiate the existence of MPB between these two compositions.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology Madras, Chennai, 600 036, India

    G. Ramesh & V. Subramanian

  2. Condensed Matter Physics Division, Indira Gandhi Center for Atomic Research, Kalpakkam, 603 102, India

    V. Sivasubramanian

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  1. G. Ramesh
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  2. V. Subramanian
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  3. V. Sivasubramanian
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Correspondence to V. Subramanian.

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Ramesh, G., Subramanian, V. & Sivasubramanian, V. Dielectric and piezoelectric properties of (0.90-x) PIN-xPT-0.10PZ ternary system near morphotropic phase boundary. J Electroceram 31, 309–315 (2013). https://doi.org/10.1007/s10832-013-9841-9

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