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The equivalent circuits for polaronic relaxation: Taking the LaNi3/4Mo1/4O3 as a model sample

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Abstract

We herein discuss the equivalent circuits for polaronic relaxation based on the results of the low-temperature dielectric properties of LaNi3/4Mo1/4O3. The ceramic samples were prepared via solid-state reaction route. The dielectric properties were investigated in the temperature range from 103 K to 330 K and the frequency range from 20 Hz to 10 MHz. Our results showed that the Debye-like relaxation found in the sample was related to be a polaronic relaxation caused by localized carriers. At low enough temperatures below 103 K, the carriers were strictly confined and the equivalent circuit for impedance spectra was an ideal capacitor. At the temperatures around room temperature, the carriers can hop between spatially fluctuating lattice potentials, the circuit of R − CPE (R = resistance, CPE = constant phase element) was found to be the better model to describe the impedance data.

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Acknowledgments

This work has been subsidized by the National Natural Science Foundation of China (Grant no. 11074001).

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Authors and Affiliations

  1. Laboratory of Dielectric Functional Materials, School of Physics & Material Science, Anhui University, Hefei, 230039, China

    Lina Liu, Chunchang Wang, Xiaohong Sun, Guojing Wang, Changmei Lei & Teng Li

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  1. Lina Liu
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  2. Chunchang Wang
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  3. Xiaohong Sun
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  4. Guojing Wang
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  5. Changmei Lei
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  6. Teng Li
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Correspondence to Chunchang Wang.

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Liu, L., Wang, C., Sun, X. et al. The equivalent circuits for polaronic relaxation: Taking the LaNi3/4Mo1/4O3 as a model sample. J Electroceram 31, 75–80 (2013). https://doi.org/10.1007/s10832-013-9804-1

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  • DOI: https://doi.org/10.1007/s10832-013-9804-1

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