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Sapphire orientation dependence of the microstructure of ZnO thin film during annealing

  • 1. Informatics: Dielectrics, Ferroelectrics, and Piezoelectrics
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Abstract

The sapphire orientation dependence of the microstructure of ZnO thin films has been studied in real-time synchrotron X-ray scattering experiments. The ZnO films with a 2400-Å-thick were grown on sapphire (001) and sapphire (110) substrates at room temperature by radio frequency magnetron sputtering. The as-deposited ZnO film on sapphire (001) has the only (002) crystal grains, while that on sapphire (110) has not only (002) crystal grains but (100) and (101) additional grains. The ZnO films were changed into fully epitaxial ZnO (002) grains both on sapphire (001) and sapphire (110) substrates with increasing the annealing temperature to 600∘C. The epitaxial relationships of the ZnO grains were summarized as ZnO (00l)[100]//sapphire (00l)[110] and ZnO (00l)[110]//sapphire (110)[001].

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Sangju National University, Sangju, Kyungbuk, 742-711, Korea

    Tae Sik Cho, Min-Su Yi & Ji Wook Jeung

  2. Department of Materials Science and Engineering, Gwangju Institute Science and Technology, Gwangju, 506-712, Korea

    Do Young Noh & Jin Woo Kim

  3. Department of Materials Science and Engineering and Center for Information Materials, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Korea

    Jung Ho Je

Authors
  1. Tae Sik Cho
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  2. Min-Su Yi
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  3. Ji Wook Jeung
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  4. Do Young Noh
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  5. Jin Woo Kim
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  6. Jung Ho Je
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Correspondence to Tae Sik Cho.

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Cho, T.S., Yi, MS., Jeung, J.W. et al. Sapphire orientation dependence of the microstructure of ZnO thin film during annealing. J Electroceram 17, 231–234 (2006). https://doi.org/10.1007/s10832-006-6994-9

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  • DOI: https://doi.org/10.1007/s10832-006-6994-9

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