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Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a conventional rf magnetron sputtering

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Abstract

In this article, it is shown that high quality ZnO films were grown on Si(111) and Al2O3(0001) substrates using a conventional rf magnetron sputtering. High-resolution X-ray diffractometry (HR-XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and photoluminescence (PL) investigations clearly confirmed that the ZnO films grown on Al2O3 (0001) at substrate temperatures above 650∘C are single crystal as well as high optical quality. It is also estimated in both cases grown on Si and Al2O3 that an introduction of template pre-grown at 500∘C can induce a homogeneous interface and improvement of emission characteristic by relaxing the strain caused by large lattice and thermal mismatch between the film and substrate and by reducing defect density in interface region.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-dong, Buk-gu, Kwangju, 500-757, Korea

    Byung-Teak Lee

  2. Kwangju Center, Korea Basic Science Institute, 300 Yongbong-dong, Buk-gu, Kwangju, 500-757, Korea

    Sang-Hun Jeong

  3. Department of Ceramic Science and Engineering, Changwon National University, 9 Sarim-dong, Changwon, Gyeongnam, 641-773, Korea

    Myong-Ho Kim, Min-Ho Kuk, Dong-Sik Bae & Tae-Kwon Song

  4. Department of Physics, Changwon National University, 9 Sarim-dong, Changwon, Gyeongnam, 641-773, Korea

    Won-Jeong Kim

Authors
  1. Byung-Teak Lee
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  2. Sang-Hun Jeong
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  3. Myong-Ho Kim
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  4. Min-Ho Kuk
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  5. Dong-Sik Bae
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  7. Won-Jeong Kim
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Correspondence to Sang-Hun Jeong.

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Lee, BT., Jeong, SH., Kim, MH. et al. Growth and characterization of device quality ZnO on Si(111) and c-sapphire using a conventional rf magnetron sputtering. J Electroceram 17, 305–310 (2006). https://doi.org/10.1007/s10832-006-6748-8

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  • DOI: https://doi.org/10.1007/s10832-006-6748-8

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