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On injection in intrinsic single-carrier devices

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A Correction to this article was published on 01 April 2024

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Abstract

By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic contacts, we calculate simple conditions for when these barriers are expected to limit injection and therefore significantly affect space-charge-limited currents in the device. We show that these conditions depend on the device temperature, semiconductor relative permittivity and effective density of states, but most importantly the thickness of the semiconducting film being probed. This is in accordance with previous observations and similar derived expressions for when defects influence single-carrier devices. The conditions described herein can be used to aid in the design of single-carrier devices for space-charge-limited current measurements that are not limited by injection.

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Acknowledgements

J.A.R. would like to thank Prof. Roderick MacKenzie for his tireless efforts developing the OghmaNano software and Prof. André D. Taylor for his support.

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The authors declare that no funds, grants or other support were received during the preparation of this manuscript.

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  1. General Engineering, Tandon School of Engineering, New York University, Brooklyn, NY, 11201, USA

    Jason A. Röhr

  2. Singh Center for Nanotechnology, School of Engineering & Applied Sciences, University of Pennsylvania, Philadelphia, PA, 19104, USA

    Jason A. Röhr

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Correspondence to Jason A. Röhr.

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The original online version of this article was revised: “In this article, van Mensfoort and Coehoorn [S. L. M. van Mensfoort and R. Coehoorn, Phys. Rev. B 78, 085207 (2008)] should be cited before introducing Equation 10.”

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Röhr, J.A. On injection in intrinsic single-carrier devices. J Comput Electron 23, 224–232 (2024). https://doi.org/10.1007/s10825-024-02129-w

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