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Numerical simulations of ultrathin CdTe solar cells with a ZnxCd1−xS window layer and a Cu2O hole transport layer

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Abstract

CdTe solar cells are investigated using a solar cell capacitance simulator software. First, a conventional fluorine-doped tin oxide (FTO)/i-SnO2/CdS/CdTe structure is simulated using input experimental data to verify the simulation process. To make the cell more economical, the thickness of the CdTe layer is decreased, resulting in a degradation of the device performance. To decrease the minority-carrier recombination loss of the designed structure, a p-type Cu2O layer is exploited at the back contact as a hole transport electron blocking layer (HT–EBL). To address the performance degradation, a ZnS/CdS bilayer is used as the window layer. The interdiffusion of Cd into the ZnS due to annealing treatment and the formation of ZnxCd1−xS compound are also studied. Cell parameters include the thickness, doping concentration, and carrier lifetime are then optimized to enhance the power conversion efficiency (PCE). The proposed FTO/i-SnO2/Zn0.5Cd0.5S/CdTe/Cu2O configuration shows the best PCE of 17.5%, short-circuit current density (Jsc) of 27.8 mA/cm2, open-circuit voltage (Voc) of 0.87 V, and fill factor of 72.34% under AM1.5G illumination.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Takestan Branch, Islamic Azad University, Takestan, Iran

    Ebrahim Amoupour, Javad Hassnzadeh & P. Azimi Anaraki

  2. Nano Research Lab, Lahijan Branch, Islamic Azad University, Lahijan, Iran

    Ali Abdolahzadeh Ziabari

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  1. Ebrahim Amoupour
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  2. Javad Hassnzadeh
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  3. Ali Abdolahzadeh Ziabari
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Correspondence to Javad Hassnzadeh.

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Amoupour, E., Hassnzadeh, J., Abdolahzadeh Ziabari, A. et al. Numerical simulations of ultrathin CdTe solar cells with a ZnxCd1−xS window layer and a Cu2O hole transport layer. J Comput Electron 20, 2501–2510 (2021). https://doi.org/10.1007/s10825-021-01779-4

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