Abstract
This paper presents and evaluates a novel approach based on material implementation to improve the performance of a 1-bit memristor-based full adder. In addition, two new efficient architectures are presented and evaluated for an 8-bit memristor-based full adder, serial memristor-based full adder and parallel-serial memristor-based full adder. Using the proposed approach, the number of required steps to accumulate the sum and carry-out in the proposed serial and parallel-serial 8-bit memristor-based full adder architectures is 168 and 56, respectively. Moreover, the number of required memristors in the proposed serial and parallel-serial memristor-based full adder architectures is 19 and 33, respectively. The evaluation results show that both delay and density are improved in the proposed architectures compared to other memristor-based full adder architectures.
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Karimi, A., Rezai, A., Hajhashemkhani, M.M.: A novel design for ultra-low power pulse-triggered D-Flip-Flop with optimized leakage power. Integr. VLSI J. 60(1), 160–166 (2018)
Rashidi, H., Rezai, A., Soltani, S.: High-performance multiplexer architecture for quantum-dot cellular automata. J. Comput. Electron. 15(3), 968–981 (2016)
Karimi, A., Rezai, A.: A design methodology to optimize the device performance in CNTFET. ECS J. Solid State Sci. Technol. 6(8), 97–102 (2017)
Colinge, J.P.: Multiple-gate SOI MOSFETs. Solid State Electron. 48(6), 897–905 (2004)
Amirsoleimani, A., Ahmadi, M., Ahmadi, A.: Logic design on mirrored memristive crossbars. IEEE Trans. Circuits Syst. II Express Briefs (2017). https://doi.org/10.1109/TCSII.2017.2729499
Nguyen, V.H., Sohn, K.Y., Song, H.: On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale \(\text{ TiO }_{2}\) thin-film memristor device. J. Comput. Electron. 15(3), 993–1002 (2016)
Kvatinsky, S., Belousov, D., Liman, S., Satat, G., Wald, N., Friedman, E.G., Kolodny, A., Weiser, U.C.: MAGIC-memristor aided logic. IEEE Trans. Circuits Syst. II Express Briefs 61(11), 895–899 (2014)
Strukov, D.B., Stewart, D.R., Borghetti, J., Li, X., Pickett, M., Medeiros-Ribeiro, G., Robinett, W., Snider, G., Strachan, J.P., Wu, W., Xia, Q., JoshuaYang, J., Williams, R.S.: Hybrid CMOS/memristor circuits. In: Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS’10), pp. 1967–1970 (2010)
Kvatinsky, S., Wald, N., Satat, G., Friedman, E.G., Kolodny, A., Weiser, U.C.: Memristor-based material implication (IMPLY) logic: design principles and methodologies. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 22(10), 2054–2066 (2013)
Ho, Y., Huang, G., Li, P.: Dynamical properties and design analysis for nonvolatile memristor memories. IEEE Trans. Circuits Syst. I Regul. Pap. 58(4), 724–736 (2011)
Shang, Y., Fei, W., Yu, H.: Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices. IEEE Trans. Circuits Syst. I Regul. Pap. 59(9), 1906–1918 (2012)
Vijay, H.M., Ramakrishnan, V.N.: Radiation effects on memristor-based non-volatile SRAM cells. J. Comput. Electron. (2017). https://doi.org/10.1007/s10825-017-1080-x
Liu, K.C., Tzeng, W.H., Chang, K.M., Chan, Y.C., Kuo, C.C., Cheng, C.W.: The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device. Microelectron. Reliab. 50(5), 670–673 (2010)
Borghetti, J., Snider, G.S., Kuekes, P.J., Yang, J.J., Stewart, D.R., Williams, R.S.: Memristives witches enable stateful logic operations via material implication. Nature 464, 873–876 (2010)
Shaltoot, A.H., Madian, A.H.: Memristor based carry look ahead adder architectures. In: Proceedings of the IEEE International Mid-west Symposium on Circuits and Systems (MWSCAS’12), pp. 298–301 (2012)
Lehtonen, E., Laiho, M.: Stateful implication logic with memristors. In: Proceedings of the 2009 IEEE/ACM International Symposium on Nanoscale Architectures, pp. 33–36. IEEE Computer Society (2009)
Wang, X., Deng, H., Feng, W., Yang, u., Chen, K.: Memristor-based XOR gate for full adder. In: 35th Chinese Control Conference (CCC), pp. 5847–5851 (2016)
Guckert, L., Swartzlander, E.E., Jun, Y.: Optimized memristor-based multipliers. IEEE Trans. Circuits Syst. I Regul. Pap. 64(2), 373–385 (2017)
Revanna, N., Swartzlander, E.E.: Memristor based high fan-out logic gates. In: IEEE Dallas Circuits and Systems Conference (DCAS) (Oct. 2016). https://doi.org/10.1109/DCAS.2016.7791136
Guckert, L., Swartzlander, E.E.: Optimized memristor-based ripple carry adders. In: 50th Asilomar Conference on Signals, Systems and Computers (2016). https://doi.org/10.1109/ACSSC.2016.7869644
Wang, X., Yang, R., Chen, Q., Zeng, Zh.: An improved memristor-CMOS XOR logic gate and a novel full adder. In: Ninth International Conference on Advanced Computational Intelligence (ICACI). IEEE (Feb. 2017). https://doi.org/10.1109/ICACI.2017.7974477
Rohani, S.G., TaheriNejad, N.: An improved algorithm for IMPLY logic based memristive full-adder. In: IEEE 30th Canadian Conference on Electrical and Computer Engineering (CCECE), (2017). https://doi.org/10.1109/CCECE.2017.7946813
Teimoory, M., Amirsoleimani, A., Shamsi, J., Ahmadi, A., Alirezaee, S., Ahmadi, M.: Optimized implementation of memristor-based full adder by material implication logic. In: 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), pp. 562–565 (2014)
Teimoory, M., Amirsoleimani, A., Ahmadi A., Alirezaee, S., Salimpour, S., Ahmadi, M.: Memristor-based linear feedback shift register based on material implication logic. In: Circuit Theory and Design (ECCTD) European Conference on IEEE, pp. 1–4 (2015)
Bickerstaff, K., Swartzlander, E.E.: Memristor-based arithmetic. In: Proceedings of the IEEE Conference on Asilomar Signals, Systems and Computers (ASILO-MAR’10), pp. 1173–1177 (2010)
Shaltoot, A.H., Madian, A.H.: Memristor-based modified recoded-multiplicand systolic serial-parallel multiplier. In: Proceedings of the IEEE International Conference on Communications, Signal Processing, and their Applications (ICCSPA’13), pp. 1–5 (2013)
Shin, S., Kim, K., Kang, S.M.: Reconfigurable stateful NOR gate for large-scale logic-array integrations. IEEE Trans. Circuits Syst. II Express Briefs 58(7), 442–446 (2011)
Shin, S., Kim, K., Kang, S.M.: Field programmable stateful logic array. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30(12), 1800–1813 (2011)
Shin, S., Kim, K., Kang, S.M.: Resistive computing: Memristors-enabled signal multiplication. IEEE Trans. Circuits Syst. I Regul. Pap. 60(5), 1241–1249 (2013)
Owlia, H., Keshavarzi, P., Rezai, A.: A novel digital logic implementation approach on nanocrossbar arrays using memristor-based multiplexers. Microelectron. J. 45, 597–603 (2014)
Backus, J.: Can programming beliberated from the von Neumann style? A functional style and its algebra of programs. Commun. ACM 21(8), 613–641 (1978)
Strukov, D.B., Likharev, K.K.: Reconfigurable nano-crossbar architectures. In: Waser, R. (ed.) Nanoelectronics and Information Technology, pp. 435–454. Wiley, Weinheim (2012)
Chen, Q., Wang, X., Wan, H., Yang, R.: A logic circuit design for perfecting memristor-based material implication. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 36(2), 279–284 (2017)
Wang, X., Wu, Q., Chen, Q., Zeng, Z.: A novel design for Memristor-based multiplexer via NOT-material implication. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (2017). https://doi.org/10.1109/TCAD.2017.2753204
Torrezan, A.C., Strachan, J.P., Medeiros-Ribeiro, G., Williams, R.S.: Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology 22(48), 485203 (2011)
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Karimi, A., Rezai, A. Novel design for a memristor-based full adder using a new IMPLY logic approach. J Comput Electron 17, 1303–1314 (2018). https://doi.org/10.1007/s10825-018-1198-5
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DOI: https://doi.org/10.1007/s10825-018-1198-5