Abstract
Since real memristor devices are still not commercially available to most researchers, modeling a memristor is an effective method to explore its properties. In this paper, a flux-controlled memristor emulator circuit that can correctly mimic the memristive behavior of a real nanoscale \(\mathrm{TiO}_2\) thin-film memristor device is presented. The mathematical equations for the proposed emulator are explicitly derived, and the design parameters for the circuit in which the emulator works as a passive memristor with positive memductance are discussed. In addition, the proposed emulator can produce various v–i hysteretic behaviors by controlling the nonlinear polynomial cubic function between the flux and charge inside. The results from numerical simulations in PSpice and MATLAB, as well as the measured results from an implemented emulator circuit on a printed circuit board using off-the-shelf electronics components, demonstrate that a controllable emulator can actually be constructed. This study serves as a foundation for understanding and designing different emulators for nanoscale \(\mathrm{TiO}_2\) thin-film memristors at the laboratory level.
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Acknowledgments
This research was supported by the Human Resource Training Program for Regional Innovation and Creativity through the Ministry of Education and National Research Foundation of Korea (NRF-2014H1C1A1066686). This research was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2015R1D1A1A01057495).
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Nguyen, V.H., Sohn, K.Y. & Song, H. On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale \(\mathrm{TiO}_2\) thin-film memristor device. J Comput Electron 15, 993–1002 (2016). https://doi.org/10.1007/s10825-016-0862-x
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DOI: https://doi.org/10.1007/s10825-016-0862-x