Abstract
Based on the mass-action law, a new capacitance–voltage (C–V) model for symmetrical step junction is presented. Furthermore, we propose a unified C–V model for realistic junction and for any applied-voltage.
Similar content being viewed by others
References
Nersesyan, S.R., Petrosyan, S.G.: Depletion length and space charge layer capacitance in doped semiconductor nanoshpere. Semicond. Sci. Technol. 27(12), 125009 (2012)
Noda, T., Vrancken, C., Vandervorst, W.: Modeling of junction formation in scaled Si devices. J. Comput. Electron. 13(1), 33–39 (2014)
Lee, S., Lee, J.-H., Kim, K.H., Yoo, S.-J., Tae Gun Kim, T.G., Kim, J.W., Jang- Kim, J.-J.: Determination of the interface energy level alignment of a doped organic hetero-junction using capacitance–voltage measurements. Org. Electron. 13, 2346–2351 (2012)
Reddy, Y.M., Nagaraj, M.K., Reddy, M.S.P., Lee, J.H., Reddy, V.R.: Temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Ni/Cu/n-InP Schottky barrier diodes. Braz. J. Phys. 43(1–2), 13–21 (2013)
Toyama, M.: Anomalous capacitance in gallium phosphide electroluminescent p–n junctions. Jpn. J. Appl. Phys. 9(8), 904–921 (1970)
Garcia-Belmonte, G., Munar, A., Barea, E.M., Bisquert, J., Ugarte, I., Pacios, R.: Charge carrier mobility and lifetime of organic bulk heterojunctions analyzed by impedance spectroscopy. Org. Electron. 9(5), 847–851 (2008)
Sharma, A., Kumar, P., Singh, B., Chaudhuri, S.R., Ghosh, S.: Capacitance–voltage characteristics of organic Schottky diode with and without deep traps. Appl. Phys. Lett. 99, 023301 (2011)
Tripathi, D.C., Mohapatra, Y.N.: Diffusive capacitance in space charge limited organic diodes: analysis of peak in capacitance–voltage characteristics. Appl. Phys. Lett. 102, 253303 (2013)
Van Den Biesen, J.J.H.: P–N junction capacitances, part I: the depletion capacitance. Philips J. Res. 40(2), 88–102 (1985). J-GLOBAL ID: 200902007581527531, ISSN/ISBN: 0165-5817
Haggag, A., Hess, K.: Analytical theory of semiconductor p–n junctions and the transition between depletion and quasineutral region. IEEE Trans. Electron. Devices 47(8), 1624–1629 (2000)
Boukredimi, A.: New capacitance–voltage model for linearly graded junction. J. Comput. Electron. 13(2), 477–489 (2014)
Shockley, W.: The theory of p–n junctions in semiconductors and p–n junction transistors. Bell Syst. Tech. J. 28(3), 435–489 (1949)
Mazhari, B., Mahajan, A.: An improved interpretation of depletion approximation in p–n-junctions. IEEE Trans. Educ. 48(1), 60–62 (2005)
Csontos, D., Ulloa, S.E.: Modeling of transport through submicron semiconductor structures: a direct solution to the coupled Poisson–Boltzmann equations. J. Comput. Electron. 3(3–4), 215–219 (2004)
Ye, X., Cai, Q., Yang, W., Luo, R.: Roles of boundary conditions in DNA simulations: analysis of ion distributions with the finite-difference Poisson–Boltzmann method. Biophys. J. 97(2), 554–562 (2009)
Liou, J.J., Lindholm, F.A., Park, J.S.: Forward-voltage capacitance and thickness of p–n junction space-charge regions. IEEE Trans. Electron Devices 34(7), 1571–1579 (1987)
Morgan, S.P., Smits, F.M.: Potential distribution and capacitance of a graded p–n junction. Bell Syst. Tech. J. 39(6), 1573–1602 (1960)
Van Mieghem, P., Mertens, R.P., Van Overstraeten, R.J.: Theory of the junction capacitance of an abrupt diode. J. Appl. Phys. 67, 4203–4211 (1990)
Towers, John D.: Finite difference methods for approximating Heaviside functions. J. Comput. Phys. 228, 3478–3489 (2009)
Kimura, M., Kojiri, T., Tanabe, A., Kato, T.: Exact extraction method of trap densities at insulator interfaces using quasi-static capacitance–voltage characteristics and numerical solutions of physical equations. Solid State Electron. 69, 38–42 (2012)
Chia, A.C.E., LaPierre, R.R.: Electrostatic model of radial p–n junction nanowires. J. Appl. Phys. 114, 074317 (2013)
Corkish, R., Green, M.A.: Junction recombination current in abrupt junction diodes under forward bias. J. Appl. Phys. 80, 3083–3090 (1996)
Murray, H.: Analytic resolution of Poisson–Boltzmann equation in nanometric semiconductor junctions. Solid State Electron. 53(1), 107–116 (2009)
Beznogov, M.V., Suris, R.A.: Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities. Semiconductors 47(4), 514–524 (2013)
Beznogov, M.V., Suris, R.A.: Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities. Semiconductors 47(4), 514–524 (2013)
Noda, T., Vrancken, C., Vandervorst, W.: Modeling of junction formation in scaled Si devices. J. Comput. Electron. 13(1), 33–39 (2014)
Mohammadnejad, S., Abkenar, N.J., Bahrami, A.: Normal distribution profile for doping concentration in multilayer tunnel junction. Opt. Quantum Electron. 45(8), 873–884 (2013)
Santillán, M.: On the use of the Hill functions in mathematical models of gene regulatory networks. Math. Model. Nat. Phenom. 3(2), 85–97 (2008)
Sudheer, N.V., Chakravorty, A.: Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors. J. Comput. Electron. 11(2), 166–171 (2012)
Kennedy, D.P.: The potential and electric field at the metallurgical boundary of an abrupt p–n semiconductor junction. IEEE Trans. Electron Devices 22(11), 988–994 (1975)
Shirts, Randall B., Roy, G., Gordon, R.G.: Improved approximate analytic charge distributions for abrupt p–n junctions. J. Appl. Phys. 50, 2840–2847 (1979)
Van Den Biesen, J.J.H.: Modeling the inductive behavior of short-base p–n junction diodes at high forward bias. Solid State Electron. 33(11), 1471–1476 (1990)
Altındal, Ş., Uslu, H.: The origin of anomalous peak and negative capacitance in the forward bias capacitance–voltage characteristics of Au/PVA/n-Si structures. J. Appl. Phys. 109, 074503 (2011)
Laux, S.E., Hess, K.: Revisiting the analytic theory of p–n junction impedance: improvements guided by computer simulation leading to a new equivalent circuit. IEEE Trans. Electron Devices 46(2), 396–412 (1999)
Przewlocki, H.M., Gutt, T., Piskorski, K.: The inflection point of the capacitance–voltage, \(\text{ C }(\text{ V }_{{\rm G}})\), characteristic and the flat-band voltage of metal-oxide-semiconductor structures. J. Appl. Phys. 115, 204510 (2014)
Kennedy, D.P.: A mathematical study of space-charge layer capacitance for an abrupt p–n semiconductor junction. Solid State Electron. 20, 311–319 (1977)
Van Den Biesen, J.J.H.: P–N junction capacitances, part II: the neutral capacitance. Philips J. Res. 40(2), 103–113 (1985). J-GLOBAL ID:200902016217177737, ISSN/ISBN: 0165-5817
Pantouvaki, M., Yu, H., Rakowski, M., Christie, P., Verheyen, P., Lepage, G., Van Campenhout, J.: Comparison of silicon ring modulators with interdigitated and p–n junctions. IEEE J. Sel. Topics Quantum Electron. 19(2), 7900308 (2013)
Ma, P., Linder, M., Sanden, M., Zhang, S.-L., Ostling, M., Frank Chang, M.-C.: An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions. Solid State Electron. 45(1), 159–167 (2001)
Schmidt, M., Pickenhain, R., Grundmann, M.: Exact solutions for the capacitance of space charge regions at semiconductor interfaces. Solid State Electron. 51(6), 1002–1004 (2007)
Kavasoglu, A.S., Kavasoglu, N., Oktik, S.: Simulation for capacitance correction from Nyquist plot of complex impedance–voltage characteristics. Solid State Electron. 52(6), 990–996 (2008)
Author information
Authors and Affiliations
Corresponding author
Appendices
Appendix 1: Capacitance-peak
The capacitance-peak can be obtained from
By including Eq. (36) into Eq. (65) and solving it for \(\hbox {K}_{\mathrm{peak}}\), we get
Solving the above expressions gives
Including Eq. (66) into Eq. (36) yields
Appendix 2: C–V inflection points
The inflection points of the C–V characteristic for any SSJ are determined by the following equation
Including Eq. (36) into Eq. (69) and solving, we obtain after some manipulations the analytic equation relating to the inflection points
Solving the above expression gives
The corresponding applied-voltages \(\hbox {V}_{1}\) and \(\hbox {V}_{2}\) are given, respectively, by:
At these voltages, the capacitances \(\hbox {C}(\hbox {V}_{1})\) and \(\hbox {C}(\hbox {V}_{2})\) are given, respectively, by
Rights and permissions
About this article
Cite this article
Boukredimi, A., Benchouk, K. New improved capacitance–voltage model for symmetrical step junction: a way to a unified model for realistic junctions. J Comput Electron 13, 971–982 (2014). https://doi.org/10.1007/s10825-014-0617-5
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-014-0617-5