Abstract
Negative Bias Temperature Instability (NBTI) in p-MOSFETs is a serious reliability concern for digital and analog CMOS circuit applications. Strain in the channel region affects negative bias temperature instabilities, low frequency noise, radiation hardness, gate oxide quality and hot carrier performance. The understanding of these phenomena in strain-engineered p-MOSFETs from fundamental physics is essential. In this paper, technology CAD (TCAD) has been used to study the effects of strain on the negative bias temperature instabilities in p-MOSFETs. A quasi two dimensional (quasi-2D) physics-based Coulomb scattering mobility model for strained-Si has been developed and implemented in Synopsys Sentaurus Device tool for device simulation to understand NBTI in strain-engineered p-MOSFETs.
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Maiti, T.K., Mahato, S.S., Chakraborty, P. et al. Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study. J Comput Electron 9, 1–7 (2010). https://doi.org/10.1007/s10825-009-0270-6
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DOI: https://doi.org/10.1007/s10825-009-0270-6