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Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET

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Abstract

In this work we present the mathematical modeling and the simulation of the diffusive transport of an electron gas confined in a nanostructure. A coupled quantum-classical system is considered, where the coupling occurs in the momentum variable: the electrons are like point particles in the direction parallel to the gas, while they behave like waves in the transverse direction. A drift-diffusion description in the transport direction is obtained thanks to an asymptotic limit of the Boltzmann transport equation for confined electrons. The system is used to model the transport of charged carriers in a nanoscale Double-Gate MOSFET. Simulations of transport in such a device are presented.

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Authors and Affiliations

  1. Istituto di Matematica Applicata e Tecnologie Informatiche, C.N.R., Via Ferrata 1, 27100, Pavia, Italy

    P. Pietra

  2. Institut de Mathématiques de Toulouse, (UMR 5219), Université Paul Sabatier, 118, route de Narbonne, 31062, Toulouse cedex 4, France

    N. Vauchelet

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  1. P. Pietra
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  2. N. Vauchelet
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Pietra, P., Vauchelet, N. Modeling and simulation of the diffusive transport in a nanoscale Double-Gate MOSFET. J Comput Electron 7, 52–65 (2008). https://doi.org/10.1007/s10825-008-0253-z

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  • DOI: https://doi.org/10.1007/s10825-008-0253-z

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