Abstract
We have developed a code for the simulation of the electrical and magnetic properties of silicon quantum dots in the framework of the TCAD Package NANOTCAD-ViDES. We adopt current spin density functional theory with a local density approximation and with the effective mass approximation. We show that silicon quantum dots exhibit large variations of the total spin as the number of electrons in the dot and the applied magnetic field are varied. Such properties are mainly due to the silicon band structure, and make silicon quantum dots interesting systems for spintronic and quantum computing experiments.
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Lisieri, M., Fiori, G. & Iannaccone, G. 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory. J Comput Electron 6, 191–194 (2007). https://doi.org/10.1007/s10825-006-0110-x
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DOI: https://doi.org/10.1007/s10825-006-0110-x