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Physical modeling of electron mobility enhancement for arbitrarily strained silicon

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Abstract

The band structure of Silicon under arbitrary stress/strain conditions has been calculated using the empirical non-local pseudopotential method. It is shown that the change of the electron effective mass cannot be neglected for general stress conditions and how this effect together with the strain induced splitting of the conduction bands can be used to optimize the electron mobility. The effective mass change has been incorporated into our Monte Carlo simulator VMC and an existing low-field mobility model.

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Authors and Affiliations

  1. Institute for Microelectronics, TU Wien, Gußhausstraße 27–29, A-1040, Wien, Austria

    Enzo Ungersboeck, Siddhartha Dhar, Gerhard Karlowatz, Hans Kosina & Siegfried Selberherr

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  1. Enzo Ungersboeck
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  2. Siddhartha Dhar
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  3. Gerhard Karlowatz
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  4. Hans Kosina
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  5. Siegfried Selberherr
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Correspondence to Enzo Ungersboeck.

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Ungersboeck, E., Dhar, S., Karlowatz, G. et al. Physical modeling of electron mobility enhancement for arbitrarily strained silicon. J Comput Electron 6, 55–58 (2007). https://doi.org/10.1007/s10825-006-0047-0

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  • DOI: https://doi.org/10.1007/s10825-006-0047-0

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