Skip to main content
Log in

Simulation of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

We provide a physical analysis of the charging and detection of the first few electrons in a laterally-coupled GaAs/AlGaAs quantum dot (LCQD) circuit with integrated quantum point contact (QPC) read-out. Our analysis is based on the numerical solution of the Kohn-Sham equation incorporated into a three-dimensional self-consistent scheme for simulating the quantum device. Electronic states and eigenenergy spectra reflecting the particular LCQD confinement shape are obtained as a function of external gate voltages. We also derive the stability diagram for the first few electrons in the device, and obtain excellent agreement with experimental data.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. 1. D. Loss and D.P. DiVincenzo, “Quantum computation with quantum dots,” Physical Review A, 57(1), 120 (1998).

    Article  Google Scholar 

  2. 2. F.R. Waugh et al., “Single-Electron Charging in Double and Triple Quantum Dots with Tunable Coupling,” Physical Review Letters, 75(4), 705 (1995).

    Article  PubMed  Google Scholar 

  3. 3. W.G. van der Wiel et al., “Electron transport through double quantum dots,” Review Modern Physics, 75(1), 1 (2003).

    Article  Google Scholar 

  4. 4. M. Ciorga et al., “Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy,” Physical Review B, 61(24), R16315 (2000).

    Article  Google Scholar 

  5. 5. J.M. Elzerman et al., “Few-electron quantum dot circuit with integrated charge read out,” Physical Review B, 67, 161308(R) (2003).

    Article  Google Scholar 

  6. 6. M. Field et al., “Measurments of coulomb blockade with a noninvasive voltage probe,” Physical Review Letters, 70(9), 1311 (1993).

    Article  PubMed  Google Scholar 

  7. 7. D. Sprinzak et al., “Charge Distribution in a Kondo-Correlated Quantum Dot,” Physical Review Letters 88(17), 176805 (2002).

    Article  PubMed  Google Scholar 

  8. 8. H. Pothier et al., “Single-Electron Pump Based on Charging Effects,” Europhysics Letters 17(3), 249 (1992).

    Google Scholar 

  9. 9. W. Kohn and L. J. Sham, “Self-Consistent Equation Including Exchange and Correlation Effects,” Physical Review 140(4A), A1133 (1965)

    Article  Google Scholar 

  10. 10. J.P. Perdew and Y. Wang, “Accurate and simple analytic reprensentation of the electron-gas correlation energy,” Physical Review B, 45(23), 13244 (1992).

    Article  Google Scholar 

  11. 11. P. Matagne et al., “Modeling of the Electronic Properties of Vertical Quantum Dots by the Finite Element Method,” Computer Modeling in Engineering and Sciences(1), 1 (2000).

    Google Scholar 

  12. 12. P. Matagne and J.-P. Leburton, “Three-dimensional analysis of the electronic structure of cylindrical vertical quantum dots,” Physical Review B, 65(23), 235323 (2002).

    Article  Google Scholar 

  13. 13. L.-X. Zhang et al., “Single-electron charging and detection in a laterally coupled quantum-dot circuit in the few-electron regime,” Physical Review B, 69(24), 245301 (2004).

    Article  Google Scholar 

  14. 14. J.C. Slater, Advances in Quantum Chemistry, 6, 1 (1972).

    Article  Google Scholar 

  15. 15. S. Nagaraja et al., “Electronic properties and spin polarization in coupled quantum dots,” Physical Review B 60(12), 8759 (1999)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to L. X. Zhang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, L.X., Melnikov, D.V. & Leburton, JP. Simulation of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out. J Comput Electron 4, 111–114 (2005). https://doi.org/10.1007/s10825-005-7119-4

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-005-7119-4

Keywords

Navigation