A transmission electron microscopy (TEM) investigation revealed that rapid vacuum-thermal carbidization of silicon at 1100°C leads to formation of cubic silicon carbide (SiC) layers. A band in the IR transmission spectrum at 798 cm–1 corresponding to the Si–C stretching vibration and a maximum in the Raman spectrum at 793 cm–1 relating to the transverse optical phonon mode of SiC confirm the formation of a layer of the cubic SiC polytype. The absorption band of Si–O–Si (1100 cm–1) was found using IR spectroscopy. The dependence of the transmission coefficient on wavenumber was determined.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 89, No. 2, pp. 204–209, March–April, 2022. https://doi.org/10.47612/0514-7506-2022-89-2-204-209.
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Lobanok, M.V., Mukhammad, A.I. & Gaiduk, P.I. Structural and Optical Properties of SiC/Si Heterostructures Obtained Using Rapid Vacuum-Thermal Carbidization of Silicon. J Appl Spectrosc 89, 256–260 (2022). https://doi.org/10.1007/s10812-022-01352-2
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DOI: https://doi.org/10.1007/s10812-022-01352-2