Skip to main content
SpringerLink
Log in

Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures

  • Published:
Journal of Applied Spectroscopy Aims and scope

Nonpolar m-plane InGaN/GaN light emitting diode structures with quantum well (QW) were grown on LiAlO2 (100) substrates. Their photoluminescence and electroluminescence were investigated at different excitation levels. It was shown that in QW of InGaN with the pronounced InGaN band tailing, the populating of both the first and the second valence subbands of InGaN takes place due to tunneling of charge carriers and, therefore, a lower degree of polarization of the electroluminescence was observed in comparison with photoluminescence. The differences in luminescence properties under optical and electrical excitation are discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.-H. Ryou, P. Douglas Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, IEEE J. Sel. Top. Quant. El., 15, 1080–1091 (2009).

    Article  Google Scholar 

  2. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, Appl. Phys. Lett., 73, 2006–2008 (1998).

    Article  ADS  Google Scholar 

  3. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, Appl. Phys. Lett., 95, 121107 (2009).

    Article  ADS  Google Scholar 

  4. S.-C. Ling, T.-C. Lu, S.-P. Chang, J.-R. Chen, H.-C. Kuo, and S.-C. Wang, Appl. Phys. Lett., 96, 231101 (2010).

    Article  ADS  Google Scholar 

  5. K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Phys. Statys Solidi (RRL), 1, 125–127 (2007).

  6. K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, and S. Noda, Proc. Semiconduct. Laser Conf. ISLC-2010, 22nd IEEE International, 101–102 (2010).

  7. Y. Zhao, S. Tanaka, C.-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Exp., 4, 082104 (2011).

    Article  ADS  Google Scholar 

  8. M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett., 84, 1281 (2004).

    Article  ADS  Google Scholar 

  9. Q. Sun, S. Y. Kwon, Z. Y. Ren, J. Han, T. Onuma, S. F. Chichibu, and S. Wang, Appl. Phys. Lett., 92, 051112 (2008).

    Article  ADS  Google Scholar 

  10. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett., 81, 469 (2002).

    Article  ADS  Google Scholar 

  11. Y. J. Sun, O. Brandt, U. Jahn, T. Y. Liu, A. Trampert, S. Cronenberg, S. Dhar, and K. H. Ploog, J. Appl. Phys., 92, 5714 (2002).

    Article  ADS  Google Scholar 

  12. T. Y. Liu, A. Trampert, Y. J. Sun, O. Brandt, and K. H. Ploog, Philos. Mag. Lett., 84, 435 (2004).

    Article  ADS  Google Scholar 

  13. W. Wang, Y. Lin, W. Yang, Z. Liu, S. Zhiou, H. Qian, F. Gao, L. Wena, and Guoqiang Li, J. Mater. Chem. C, 2, 4112–4116 (2014).

  14. C. Mauder, L. Rahimzadeh Khoshroo, H. Behmenburg, T. C. Wen, Y. Dikme, M. V. Rzheutski, G. P. Yablonskii, J. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, and R. H. Jansen, J. Cryst. Growth, 310, 4976–4978 (2008).

    Article  ADS  Google Scholar 

  15. C. Mauder, K. R. Wang, B. Reuters, H. Behmenburg, L. Rahimzadeh Khoshroo, Q. Wan, A. Trampert, M. V. Rzheutski, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. Heuken, H. Kalisch, and R. H. Jansen, Phys. Status Solidi, B, 242, 1750–1752 (2010).

  16. C. Mauder, L. Rahimzadeh Khoshroo, H. Behmenburg, B. Reuters, M. Bösing, M. V. Rzheutski, E. V. Lutsenko, G. P. Yablonskii, J. F. Woitok, M. M. C. Chou, M. Heuken, H. Kalisch, and R. H. Jansen, Phys. Status Solidi, C, 6, No. S2, S482—S485 (2009).

  17. S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoc, U. Ozgur, S. Metzner, F. Bertram, J. Christen, and B. Gil, J. Appl. Phys., 117, 013106 (2015).

    Article  ADS  Google Scholar 

  18. N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, and Yu. G. Shreter, Semiconductors, 39, 594–599 (2005).

    Article  ADS  Google Scholar 

  19. H. Sakuta, Y. Yamanaka, S. Kurai, and T. Taguchi, Nucl. Instr. Meth. Phys. Res., B, 232, 295–298 (2005).

Download references

Author information

Authors and Affiliations

  1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost’ Ave., Minsk, 220072, Belarus

    E. V. Lutsenko, M. V. Rzheutski & V. N. Pavlovskii

  2. KACST, National Nanotechnology Center, Riyadh, 11442, Saudi Arabia

    A. Alyamani, M. Aljohenii & A. Aljerwii

  3. AIXTRON SE, Herzogenrath, Germany

    C. Mauder & M. Heuken

  4. Aachen University, Aachen, Germany

    B. Reuters, H. Kalisch, M. Heuken & A. Vescan

Authors
  1. E. V. Lutsenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. V. Rzheutski
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. N. Pavlovskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. Alyamani
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Aljohenii
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. Aljerwii
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. C. Mauder
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. B. Reuters
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. H. Kalisch
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. M. Heuken
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. A. Vescan
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. V. Rzheutski.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 82, No. 6, pp. 880–884, November–December, 2015.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lutsenko, E.V., Rzheutski, M.V., Pavlovskii, V.N. et al. Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures. J Appl Spectrosc 82, 956–960 (2016). https://doi.org/10.1007/s10812-016-0211-7

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10812-016-0211-7

Keywords

Search

Navigation