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Intrinsic defects in ZnO and GaN crystals

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Abstract

The kinetics of defect formation in the system of a crystal with a nonmetal component in the activated gas phase has been investigated. The data obtained has made it possible to develop physicochemical methods of regulating the defect-formation processes depending on the adsorption—desorption—crystallization equilibrium on the surface of a crystal. A kinetic model of defect formation in the AIIBVI and AIIIBV compounds is proposed. Results of the kinetic analysis of the intrinsic defects in the ZnO and GaN compounds are presented. The photoluminescence spectra of GaN films annealed in a flow of nonmetal-component radicals (atoms) have been considered.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, 4 Shmidt Str., Berdyansk, 71100, Ukraine

    I. V. Rogozin & A. V. Marakhovskii

Authors
  1. I. V. Rogozin
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  2. A. V. Marakhovskii
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Correspondence to I. V. Rogozin.

Additional information

This work was reported at the Vth International Scientific-Technical Conference on Quantum Electronics, November 22–25, 2004, Minsk, Belarus.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 760–765, November–December, 2005.

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Rogozin, I.V., Marakhovskii, A.V. Intrinsic defects in ZnO and GaN crystals. J Appl Spectrosc 72, 833–839 (2005). https://doi.org/10.1007/s10812-006-0012-5

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  • DOI: https://doi.org/10.1007/s10812-006-0012-5

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