Abstract
X-ray diffraction, transmission and scanning electron microscopy, and secondary-ion mass spectrometry data demonstrate that the grain size, structure, and composition of polycrystalline silicon (poly-Si) films grown using hydride pyrolysis depend on the GeH4 : SiH4 volume ratio in the gas mixture, dopant (boron or phosphorus) concentration, substrate temperature, and heat-treatment temperature. The films grown at substrate temperatures below 600°C are amorphous, and those deposited at 600°C are amorphous-crystalline. Textured poly-Si films are only obtained at 620°C or higher substrate temperatures. Doping with germanium, an isovalent impurity, improves the structural perfection of poly-Si films.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Koleshko, V.M. and Kovalevskii, A.A., Polikristallicheskie plenki poluprovodnikov v mikroelektronike (Polycrystalline Semiconductor Films in Microelectronics), Minsk: Nauka i Tekhnika, 1978.
Polycrystalline Semiconductors: Physical Properties and Applications, Harbeke, G., Ed., Heidelberg: Springer, 1985. Translated under the title Polikristallicheskie poluprovodniki, Moscow: Mir, 1989, pp. 223–262.
Kovalevskii, A.A., Suppression of Recrystallization Processes in Polycrystalline Silicon Films by Thin Layers of Amorphous Silicon, Mikroelectronika, 1998, vol. 27, no.1, pp. 16–21.
Kovalevskii, A.A., Structure and Morphology of Si Films Grown on Porous Si by Reduction of Dichlorosilane, Neorg. Mater., 1999, vol. 35, no.2, pp. 152–156 [Inorg. Mater. (Engl. Transl.), vol. 35, no. 2, pp. 102–105].
Kovalevskii, A.A., Isovalent Doping of Polycrystalline Silicon during Vapor Transport Deposition, Materialy mezhdunarodnoi nauchno-tekhnicheskoi konferentsii “Novye tekhnologii izgotovleniya mnogokristal'nykh modulei” (Proc. Int. Sci. Technol. Conf. on Novel Technologies of Multicrystal Modules), Minsk-Naroch', 2002, pp. 110–114.
Kovalevskii, A.A., Chemical Interaction of Germanium with Polycrystalline Silicon Films, Mater. Tekhnol. Instrum., 2004, vol. 9, no.1, pp. 6–12.
Kovalevskii, A.A. and Krishchenko, A.P., A Mechanism of Polycrystalline Silicon Film Deposition in a Reduced-Pressure Reactor, Materialy mezhdunarodnoi nauchnotekhnicheskoi konferentsii “Novye tekhnologii izgotovleniya mnogokristal'nykh modulei” (Proc. Int. Sci. Technol. Conf. on Novel Technologies of Multicrystal Modules), Minsk-Naroch', 2002, pp. 44–48.
Kovalevskii, A.A., Borisevich, V.M., Dolbik, A.V., et al., Effect of Substrate Surface Condition on Polycrystalline Silicon Film Deposition, Izv. Beloruss. Inzh. Akad., 2003, no. 1(15)/4, pp. 50–52.
Kovalevskii, A.A., Tsybul'skii, V.V., Dolbik, A.V., and Borisevich, V.M., Formation of Spiny Hillocks and Variously Oriented Grains in Polycrystalline Silicon Films, Izv. Beloruss. Inzh. Akad., 2003, Izv. Beloruss. Inzh. Akad., 2003, no. 1(15)/4, pp. 44–46.
Borisevich, V.M., Kovalevskii, A.A., Nelaev, V.V., et al., Investigation and Optimization of the Deposition of Polycrystalline Silicon Films Isovalently Doped with Germanium, Dokl. Beloruss. Gos. Univ. Inform. Radioelektron., 2004, no. 5, pp. 87–103.
Author information
Authors and Affiliations
Additional information
__________
Translated from Neorganicheskie Materialy, Vol. 41, No. 12, 2005, pp. 1429–1435.
Original Russian Text Copyright © 2005 by Kovalevskii, Borisenko, Borisevich, Dolbik.
Rights and permissions
About this article
Cite this article
Kovalevskii, A.A., Borisenko, V.E., Borisevich, V.M. et al. Doping Effect on the Structure of Polycrystalline Silicon Films Grown via Silane Pyrolysis. Inorg Mater 41, 1260–1265 (2005). https://doi.org/10.1007/s10789-005-0297-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s10789-005-0297-4