Abstract
Polycrystalline Si0.4Ge0.6 was prepared by electron-beam float-zone melting, and its thermoelectric properties were studied in the intrinsic region. The samples were found to be p-type, with a room-temperature resistivity from 5 to 20 Ωcm. The thermoelectric figure of merit of the alloy in the intrinsic region (500–1000 K) is lower than that of heavily doped alloys. Above 1000 K, a sharp rise in its thermoelectric figure of merit would be expected.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 10, 2005, pp. 1176–1181.
Original Russian Text Copyright © 2005 by Atabaev, Matchanov, Bakhranov, Saidov.
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Atabaev, I.G., Matchanov, N.A., Bakhranov, E.N. et al. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6 . Inorg Mater 41, 1033–1038 (2005). https://doi.org/10.1007/s10789-005-0256-0
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DOI: https://doi.org/10.1007/s10789-005-0256-0