Abstract
The texturing of aluminum in Al/Ti bilayers on (111) Si with and without a low-temperature oxide layer is studied by electron microscopy and x-ray diffraction at different boron and phosphorus concentrations in silicon. The Al layers grown on B-doped Si are shown to have extremely smooth surfaces. The mechanism of oriented Al growth is discussed.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 8, 2005, pp. 922–927.
Original Russian Text Copyright © 2005 by Snitovsky.
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Snitovsky, Y.P. Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures. Inorg Mater 41, 807–811 (2005). https://doi.org/10.1007/s10789-005-0216-8
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DOI: https://doi.org/10.1007/s10789-005-0216-8