Abstract
Bi12 SiO20 crystals doped with Os, Re, Ru, and Rh were grown by the Czochralski technique, and their conductivity (real and imaginary parts) was measured as a function of temperature and frequency. The results are interpreted as evidence that the charge transport in the crystals is due to hopping along chains of localized states.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 2, 2005, pp. 197–200.
Original Russian Text Copyright © 2005 by Milenov, Veleva, Petrova, Gospodinov, Skorikov, Egorysheva, Kargin, Vasil’ev.
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Milenov, T.I., Veleva, M.N., Petrova, D.P. et al. Electrical conductivity of Bi12SiO20 single crystals doped with Os, Re, Ru, and Rh. Inorg Mater 41, 152–155 (2005). https://doi.org/10.1007/s10789-005-0035-y
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DOI: https://doi.org/10.1007/s10789-005-0035-y