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Influence of Thermal Nonequilibrium on Recombination, Space Charge, and Transport Phenomena in Bipolar Semiconductors

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Abstract

A detailed analysis of the influence of thermal nonequilibrium on transport in semiconductors was carried out. Special attention was paid to the effect of this nonequilibrium on recombination and the space charge. In particular, recombination has the same mathematical expression for band-to-band and Shockley–Read–Hall transitions; the only difference between the expressions of these recombination mechanisms is a different lifetime. For both types of recombination, the space charge and homogeneity in space nonequilibrium temperature do not affect charge transport, but it modifies, of course, the electron and hole concentrations in nonequilibrium conditions. The lifetime can be introduced only for band-to-band recombination under the quasineutrality condition.

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Acknowledgments

Authors wish to thank CONACYT México and Proyectos SIP-20180148 and SIP-20195097 Instituto Politécnico Nacional for partial financial support. The authors are grateful to Prof. J.E. Velazquez Perez (USAL, Spain) for interesting discussions and Editor-in-Chief Emeritus Andreas Mandelis, Topical Reviews Editor Roberto Li Voti, and anonymous reviewers for helpful comments.

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Authors and Affiliations

  1. Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Av. IPN 2508, 07360, México, CDMX, México

    I. Ch. Ballardo Rodriguez & Yu. G. Gurevich

  2. UPIITA- Instituto Politécnico Nacional, Av. IPN 2580, 07738, México, CDMX, México

    I. Ch. Ballardo Rodriguez & B. El Filali

  3. Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas 152, 07730, México, CDMX, México

    O. Yu. Titov

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  1. I. Ch. Ballardo Rodriguez
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  2. B. El Filali
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  3. O. Yu. Titov
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  4. Yu. G. Gurevich
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Correspondence to Yu. G. Gurevich.

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Ballardo Rodriguez, I.C., El Filali, B., Titov, O.Y. et al. Influence of Thermal Nonequilibrium on Recombination, Space Charge, and Transport Phenomena in Bipolar Semiconductors. Int J Thermophys 41, 65 (2020). https://doi.org/10.1007/s10765-020-02647-2

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