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Design and Realization of a W-Band Antenna in Package (AiP) Array Based on Silicon and Quartz

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Abstract

This paper presents a novel W-band AiP array based on the wafer-level packaging technology with through silicon via (TSV). The proposed antenna array is composed of 2 × 4 radiation elements, a grounded coplanar waveguide (GCPW) to strip line (SL) vertical transition, and a GCPW power divider network. The substrate of the radiation element is quartz, which is welded to the silicon by ball grid array (BGA). The GCPW-to-SL vertical transition based on TSV and ball bumping realizes low-loss interconnection between different silicon layers. The GCPW power divider network feeds the 2 × 4 radiation elements with equal amplitudes and equal phases. The measured results show that the insertion loss of the GCPW-to-SL vertical transition is less than 2 dB in the working frequency range of 90–96 GHz and the gain of the proposed AiP array is about 9.5 dBi at 93 GHz, which verify the feasibility of the AiP solution at W-band.

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Acknowledgements

This work is supported by the Major Key Project of PCL under grant PCL2021A01-2 and by the Open Project of the State Key Laboratory of Millimeter Waves under grant K202119.

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Authors and Affiliations

  1. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, 210096, China

    Zhixiang Cao, Jiapeng Yang & Hongfu Meng

  2. School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huai’an, 223001, China

    Zhixiang Cao

  3. Purple Mountain Laboratories, Nanjing, 211111, China

    Zhixiang Cao & Hongfu Meng

  4. Nanjing Guobo Electronics Co., Ltd, Nanjing, 211111, China

    Jiapeng Yang

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  1. Zhixiang Cao
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  2. Jiapeng Yang
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Correspondence to Hongfu Meng.

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Cao, Z., Yang, J. & Meng, H. Design and Realization of a W-Band Antenna in Package (AiP) Array Based on Silicon and Quartz. J Infrared Milli Terahz Waves 43, 282–293 (2022). https://doi.org/10.1007/s10762-022-00853-7

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  • DOI: https://doi.org/10.1007/s10762-022-00853-7

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