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Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band

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Abstract

This paper presents a 120-GHz wideband phase-compensated variable gain amplifier (VGA) with a p-type metal–oxide–semiconductor (PMOS) switch using a 40-nm CMOS process. By applying a PMOS switch to the common source (CS) amplifier, the gain of the CS amplifier can be controlled by as much as 6.1 dB with 2° phase variations in 15.1-GHz bandwidth ranging from 100.9 to 115 GHz. The measured gain and 3-dB bandwidth of the VGA are 19.1 dB and 33.8 GHz for high-gain state, and 13 dB and 44.2 GHz for low gain state, respectively. Meanwhile, the DC power consumption in the high-gain state is 45 mW, and the OP1dB is −2.7 dBm.

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Funding

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Science, ICT and Future Planning) (No. 2017R1A2B3009294), and the National Research Foundation of Korea (NRF) through the Korea Government, Ministry of Science, Information and Communications Technology (ICT) and Future Planning (MSIP), under Grant 2019R1C1C1003918.

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Authors and Affiliations

  1. Nano Electronics Lab, Samsung Advanced Institute of Technology, Suwon, South Korea

    Tae Hwan Jang

  2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea

    Tae Hwan Jang, Seung Hun Kim & Chul Soon Park

  3. Department of Electronic Engineering, Wonkwang University, Iksan, 54538, South Korea

    Chul Woo Byeon

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  1. Tae Hwan Jang
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  2. Seung Hun Kim
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  4. Chul Soon Park
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Correspondence to Chul Woo Byeon.

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Jang, T.H., Kim, S.H., Byeon, C.W. et al. Wideband Phase-Compensated VGA with PMOS Switch in 40-nm CMOS for 120-GHz Band. J Infrared Milli Terahz Waves 42, 514–524 (2021). https://doi.org/10.1007/s10762-021-00794-7

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  • DOI: https://doi.org/10.1007/s10762-021-00794-7

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