Abstract
One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable and sufficient p-type doping. The theoretically proposed concepts of cluster-doping or codoping should lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor 111In and the group-V acceptors N and P. The formation of In-N and In-P pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one N or P acceptor. Finally, first reports on PAC investigations using 77Br as donor in ZnO are presented.
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Türker, M., Deicher, M., Wolf, H. et al. Donor-acceptor complexes in ZnO. Hyperfine Interact 197, 173–180 (2010). https://doi.org/10.1007/s10751-010-0209-0
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DOI: https://doi.org/10.1007/s10751-010-0209-0