Nonstoichiometry of doped zirconia

Abstract

This paper is a continuation of [1] and is devoted to determining the type of defects arising in different (α, β, and γ) modifications of crystal lattice of doped zirconia (solid solution of doping oxide MO_i in zirconia-Zr(M)O_2−x ), as well as to finding the dependence of the number of defects on temperature T and on partial pressure of oxygen p(O₂) in the ambient medium. Expressions are obtained for the sought dependences. It is assumed that a partial disintegration of the crystal lattice occurs in the high-temperature region, with the released neutral atoms (at low values of p(O₂)) or cations (at high values of p(O₂)) going to the interstice; doping elements are involved in such a transition along with zirconium.