Skip to main content
SpringerLink
Log in

Role of surface defects in room-temperature growth of metals on Si(100)2 × 1

  • Published:
Czechoslovak Journal of Physics Aims and scope

Abstract

Nucleation and formation of silver islands on the Si(100)2 × 1 surface was for the first time studied by scanning tunneling microscopy directly during deposition. Crucial role of C-type defects on growth has been observed. Rapidly diffusing Ag atoms nucleate on these defects and during island evolution the defects represent stable terminations of Ag atomic chains.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. R. Tromp, R. Hamers, and J. Demuth: Phys. Rev. Lett. 55 (1985) 1303.

    ADS  Google Scholar 

  2. R. Hamers and U. Kohler: J. Vac. Sci. Technol. A 7 (1989) 2854.

    Article  ADS  Google Scholar 

  3. M. Hossain, Y. Yamashita, K. Mukai, and J. Yoshinobu: Phys. Rev. B 67 (2003) 153307.

    Article  ADS  Google Scholar 

  4. S. Okano and A. Oshiyama: Surf. Sci. 554 (2004) 272.

    Article  ADS  Google Scholar 

  5. F. Slanina and M. Kotrla: Physica A 256 (1998) 1.

    Article  Google Scholar 

  6. C. Ratsch and J. Venables: J. Vac. Sci. Technol. A 21 (2003) S96.

    Article  ADS  Google Scholar 

  7. G. Brocks, P. Kelly, and R. Car: Phys. Rev. Lett. 70 (1993) 2786.

    Article  ADS  Google Scholar 

  8. K. Kong, H. Yeom, D. Ahn, H. Yi, and B. Yu: Phys. Rev. B 67 (2003) 235328.

    Article  ADS  Google Scholar 

  9. Z. Dong, T. Yakabe, D. Fujita, Q. Jiang, and H. Nejo: Surf. Sci. 380 (1997) 23.

    Article  Google Scholar 

  10. J. Veuillen, J. Gomez-Rodriguez, and R. Cinti: J. Vac. Sci. Technol. B 14 (1996) 1010.

    Article  Google Scholar 

  11. L. Jure, L. Magaud, J. Gomez-Rodriguez, P. Mallet, and J. Veuillen: Phys. Rev. B 61 (2000) 16902.

    ADS  Google Scholar 

  12. A. Samsavar, E. Hirschorn, F. Leibsle, and T. Chiang: Phys. Rev. Lett. 63 (1989) 2830.

    Article  ADS  Google Scholar 

  13. T. Hashizume, R. Hamers, J. Demuth, K. Markert, and T. Sakurai: J. Vac. Sci. Technol. A 8 (1990) 249.

    ADS  Google Scholar 

  14. X. Lin, K. Wan, and J. Nogami: Phys. Rev. B 47 (1993) 13491.

    ADS  Google Scholar 

  15. H. Yoon, M. Ryu, K. Han, and I. Lyo: Surf. Sci. 547 (2003) 210.

    Article  ADS  Google Scholar 

  16. G. Xu et al.: Surf. Sci. 577 (2005) 77.

    Article  ADS  Google Scholar 

  17. M. Evans and J. Nogami: Phys. Rev. B 59 (1999) 7644.

    Article  ADS  Google Scholar 

  18. J. Glueckstein, M. Evans, and J. Nogami: Surf. Sci. 415 (1998) 80.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronics and Vacuum Physics, Faculty of Mathematics and Physics, Charles University in Prague, V Holesovickach 2, 180 00, Praha 8, Czech Republic

    Pavel Kocan, Pavel Sobotik & Ivan Ostadal

Authors
  1. Pavel Kocan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Pavel Sobotik
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Ivan Ostadal
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kocan, P., Sobotik, P. & Ostadal, I. Role of surface defects in room-temperature growth of metals on Si(100)2 × 1. Czech J Phys 56, 27–32 (2006). https://doi.org/10.1007/s10582-006-0062-1

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10582-006-0062-1

Key words

Search

Navigation