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Harmonic and intermodulation performance of MoS2FET- and GFET-based amplifiers

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Abstract

This paper presents a simple mathematical model for the output–input voltage characteristic of the graphene field effect transistor (GFET)- and the molybdenum disulfide field effect transistor (MoS2FET)-based inverting amplifiers. The model, basically a Fourier series, yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output voltage resulting from a multisinusoidal input voltage. The special case of a two-tone equal-amplitude input voltage is considered in detail. The results show that the harmonic and intermodulation performance of the complementary GFET- and the MoS2FET-based inverting amplifiers is strongly dependent on the bias voltage and the amplitudes of the input tones with the third-order intermodulation component dominating over a wide range of the input voltage amplitudes.

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Authors and Affiliations

  1. King Fahd University of Petroleum and Minerals, Box 203, Dhahran, 31261, Saudi Arabia

    Muhammad Taher Abuelma’atti

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  1. Muhammad Taher Abuelma’atti
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Correspondence to Muhammad Taher Abuelma’atti.

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See Tables 1 and 2.

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Abuelma’atti, M.T. Harmonic and intermodulation performance of MoS2FET- and GFET-based amplifiers. Analog Integr Circ Sig Process 76, 147–154 (2013). https://doi.org/10.1007/s10470-013-0068-0

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  • DOI: https://doi.org/10.1007/s10470-013-0068-0

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