Abstract:
AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transitions in the temperature range of 2 K to 300 K were investigated. The photoluminescence data obtained give clear evidence of the influence of the aluminum concentration on the temperature dependence of excitonic transitions in the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Vi na et al. [Phys. Rev. B 30, 1979 (1984)] and Pässler [Phys. Stat. Sol. (b) 200, 155 (1997)] models were used to fit the experimental points.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received 12 July 2000
Rights and permissions
About this article
Cite this article
Lourenço, S., Dias, I., Laureto, E. et al. Influence of Al content on temperature dependence of excitonic transitions in quantum wells. Eur. Phys. J. B 21, 11–17 (2001). https://doi.org/10.1007/s100510170207
Issue Date:
DOI: https://doi.org/10.1007/s100510170207