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Multi-sideband Generation in a Femtosecond Cr4+:YAG Laser

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Abstract

We describe the behavior of multi-sidebands in a self-mode-locked femtosecond Cr4+:YAG laser operating near 1.54 μm. Stokes and anti-Stokes sideband components are extended over 20 THz around the center frequency. An interesting feature here is that when the spectral width of the mode-locked pulse is increased, the specific Stokes sideband near 1.65 μm (a shift of 13.5 THz) is strongly enhanced due to an induced-Raman process in the laser rod. The measured frequency shifts for all sidebands are well explained by four-wave-mixing processes in the laser rod, accompanied by the resonance effect of the soliton and dispersive wave, both of which are affected mainly by cavity dispersions.

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Author notes

  1. Yuzo Ishida

    Present address: Toyama National College of Maritime Technology, 1-2, Neriya, Ebie, Shinminato-shi, Toyama, 933-0293, Japan

Authors and Affiliations

  1. NTT Opto-electronics Laboratories, 3-1 Morinosato, Atsugi, 243-0198, Japan

    Yuzo Ishida & Kazunori Naganuma

  2. NTT Basic Research Laboratories, 3-1, Morinosato, Atsugi, 243-0198, Japan

    Hidehiko Kamada

Authors
  1. Yuzo Ishida
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  2. Kazunori Naganuma
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  3. Hidehiko Kamada
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Ishida, Y., Naganuma, K. & Kamada, H. Multi-sideband Generation in a Femtosecond Cr4+:YAG Laser. OPT REV 6, 37–41 (1999). https://doi.org/10.1007/s10043-999-0037-0

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  • DOI: https://doi.org/10.1007/s10043-999-0037-0

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