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Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

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Abstract

The transient response of the lateral photovoltaic effect (LPE) was observed when Ti–SiO2–Si structure was irradiated by a 650 nm laser which is attributed to the remarkable absorptivity. LPE is linearly dependent on the laser irradiation position. The LPE has high sensitivity of 68.4 mV/mm and linearity of 0.9853, respectively. This paper focuses on the transient response process of LPE at different laser irradiation positions. The mechanism of the response time of the MOS structure is caused by the diffusion of electrons to the positive and negative electrodes. We experimentally verified this mechanism by laser irradiation on different positions. The principle of transient LPE is revealed by carrier diffusion and recombination theory. LPE has faster response time and larger amplitude when the laser irradiation points are close to electrodes. A resistor–capacitor (RC) circuit model combines with LPE which is established to simulate and analyze the transient process. The research provides a new direction for LPE-based sensors with regard to the amplitude and response time which change with laser irradiation position in Ti–SiO2–Si structure for researchers to develop position-sensitive sensors.

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The data that support the findings of this study are available from the corresponding authors upon request.

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Acknowledgements

This work is supported by the Physics Key Discipline of Liupanshui Normal University under Grant No. LPSSYZDXK201801.

Funding

Liupanshui Normal University, No. LPSSYZDXK201801, Xiang Ling, No. LPSSYZDXK201801, Peng Fei Zhu, No. LPSSYZDXK201801, Kun Zhu.

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Authors and Affiliations

  1. School of Mathematics, Physics and Statistics, Shanghai University of Engineering Science, 333 Longteng Street, Shanghai, China

    Xiang Ling, Peng Fei Zhu, Yun Xia Ping, Pei Song & Jin Yi Du

  2. School of Electrical Engineering, Liupanshui Normal University, 288 Minghu Street, Liupanshui, China

    Peng Fei Zhu & Kun Zhu

Authors
  1. Xiang Ling
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  2. Peng Fei Zhu
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  3. Kun Zhu
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  4. Yun Xia Ping
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  5. Pei Song
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  6. Jin Yi Du
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Contributions

XL and PFZ mainly wrote the manuscript and analyzed the experimental results. KZ completed the I–V curve measurement. Figures 1, 2 and 3 were designed and completed by KZ. KZ and YX Ping completed the experiments to obtain experimental data. The experimental sample Ti–SiO2–Si was made by PS. PS produced Figs. 4, 5, and 6. Figures 7, 8 and 9 were jointly completed by LX and PFZ. JYD completed the experiment on the absorption spectrum of the sample and drew Fig. 10.

Corresponding author

Correspondence to Peng Fei Zhu.

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Conflict of interest

Xiang Ling, Peng Fei Zhu, Kun Zhu, Yun Xia Ping, Pei Song, and Jin Yi Du declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Ling, X., Zhu, P.F., Zhu, K. et al. Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure. Opt Rev 30, 9–16 (2023). https://doi.org/10.1007/s10043-022-00776-7

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