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XPS and EIS studies to account for the passive behavior of the alloy Ti-6Al-4V in Hank’s solution

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Abstract

The passivation mechanism of the film formed on the alloy Ti-6Al-4V was evaluated in Hank’s solution to infer the properties of this alloy as an implant material. Alloy passivation was found from electrochemical measurements and X-ray photoelectron spectroscopy (XPS) to strongly depend on the oxidation of Ti and Al, microstructural changes associated with the Al and V, and the formation of metallic hydroxides and oxyhydroxides that disrupt the TiO2 matrix. Experimental impedance diagrams were fitted using the point defect model (PDM, transfer function) to describe the passive character of the alloy. According to this analysis, the transport of oxygen and hydroxide defects across the film on the alloy surface determines the adsorption of oxygen from water dissociation and/or phosphate and the precipitation of calcium phosphate. Therefore, osseointegration of the alloy Ti-6Al-4V occurs across the entire surface and strongly depends on the defects present in the film, Al incorporation, the penetration of hydroxide ions (hydration), and oxygen adsorption.

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Acknowledgements

This research was financially supported by SIP-IPN multidisciplinary project No. 2019-2011. M.P. Chávez acknowledges the scholarship granted by CONACyT (Mexico) to conduct her doctoral studies. JVA also thanks CONACyT for financial support, “Investigación Científica Básica” 2017‐2018 grant No. A1‐S‐21608.

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Authors and Affiliations

  1. Depto. Energía, Universidad Autónoma Metropolitana Azcapotzalco, Av. San Pablo, No. 180, Col. Reynosa Tamaulipas, Azcapotzalco, C.P. 02200, Ciudad de México, Mexico

    Mercedes P. Chávez-Díaz & Rosa M. Luna-Sánchez

  2. Escuela Superior de Ingeniería Química e Industrias Extractivas, Departamento de Ingeniería Metalurgia y Materiales, UPALM Zacatenco, Instituto Politécnico Nacional, Lindavista, C.P. 07738, Ciudad de México, Mexico

    Mercedes P. Chávez-Díaz & José M. Hallen

  3. Departamento de Química, CONACYT- Universidad Autónoma Metropolitana-Iztapalapa, Apartado Postal, 55-534, 09340, Iztapalapa CDMX, Mexico

    Jorge Vazquez-Arenas

  4. Centro de Nanociencias y Micro y Nanotecnologías, UPALM Zacatenco, Instituto Politécnico Nacional, Lindavista, C.P. 07738, Ciudad de México, Mexico

    Luis Lartundo-Rojas

  5. Escuela Superior de Ingeniería Química e Industrias Extractivas, Departamento de Ingeniería Química Industrial, UPALM Zacatenco, Instituto Politécnico Nacional, Lindavista, C.P. 07738, Ciudad de México, Mexico

    Román Cabrera-Sierra

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  1. Mercedes P. Chávez-Díaz
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  2. Rosa M. Luna-Sánchez
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  3. Jorge Vazquez-Arenas
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  4. Luis Lartundo-Rojas
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  5. José M. Hallen
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  6. Román Cabrera-Sierra
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Corresponding authors

Correspondence to Jorge Vazquez-Arenas or Román Cabrera-Sierra.

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Chávez-Díaz, M.P., Luna-Sánchez, R.M., Vazquez-Arenas, J. et al. XPS and EIS studies to account for the passive behavior of the alloy Ti-6Al-4V in Hank’s solution. J Solid State Electrochem 23, 3187–3196 (2019). https://doi.org/10.1007/s10008-019-04368-5

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  • DOI: https://doi.org/10.1007/s10008-019-04368-5

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