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Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system

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Abstract

We investigate the introduction of oxygen vacancies by the interaction of Pt with CeO2(111) (ceria) thin epitaxial film grown on Cu(111) and the influence of the vacancies on resistive switching behavior. For this purpose, we used X-ray photoelectron spectroscopy and conductive atomic force microscopy. We found out that after Pt deposition, the ceria film was partially reduced. By our estimation, the reduction occurs not only at the Pt/CeO2 interface, but also on the surface of the ceria film which is not covered by Pt, after Pt deposition and annealing. A different distribution of oxygen vacancies in the film proves to have an influence on the resistance switching process of the film. Finally, the proper balance between the reduced and the unreduced species in order to obtain relatively stable repeatable resistance switch with clear resistance window is discussed.

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Acknowledgments

M. Chundak acknowledges the ongoing financial support by the Japan Society for the Promotion of Science (JSPS) under the “Postdoctoral Fellowship for Overseas Researchers” program. This work was also supported by the “Charles University—NIMS Joint Graduate School Program.” One of the authors (M.C.) is also thankful to the Grant Agency of the Charles University (GAUK 645412) for support.

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Authors and Affiliations

  1. MANA Nano-Electronics Materials Unit, National Institute for Materials Science, 3-13, Sakura, Tsukuba, 305-0003, Japan

    Mykhailo Chundak, Michiko Yoshitake, Michal Vaclavu & Toyohiro Chikyow

  2. Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University in Prague, V Holešovičkách 2, 18000, Prague 8, Czech Republic

    Mykhailo Chundak, Michal Vaclavu & Vladimir Matolin

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  1. Mykhailo Chundak
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  2. Michiko Yoshitake
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  3. Michal Vaclavu
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  4. Vladimir Matolin
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  5. Toyohiro Chikyow
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Correspondence to Mykhailo Chundak.

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Chundak, M., Yoshitake, M., Vaclavu, M. et al. Influence of chemical equilibrium in introduced oxygen vacancies on resistive switching in epitaxial Pt-CeO2 system. J Solid State Electrochem 21, 657–664 (2017). https://doi.org/10.1007/s10008-016-3400-7

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  • DOI: https://doi.org/10.1007/s10008-016-3400-7

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