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Mixed oxide semiconductors based on bismuth for photoelectrochemical applications

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Abstract

The structural and photoelectrochemical properties of mixed oxide semiconductor films of Bi-Nb-M-O (M = Al, Fe, Ga, In) were studied in order to explore their use as photoanodes in photoelectrochemical cells. These films were prepared on AISI/SAE 304 stainless steel plates by sol–gel dip-coating. The films were characterized by scanning electron microscopy—energy dispersive spectroscopy (SEM-EDS), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), and their photoelectrochemical properties were studied by open circuit potential (OCP) measurements, linear sweep voltammetry (LSV), and cyclic voltammetry (CV). SEM micrographs show homogeneous and rough films with agglomerates on the surface. EDS analyses show that the films are composed of Bi, Nb, and M, and the agglomerates are mainly composed of Bi. XRD analyses show a predominant crystalline phase of bismuth(III) oxide (Bi2O3) and a secondary phase composed of Bi-M mixed oxides. It is noteworthy that there was no identified niobium-based crystalline phase. XPS results reveal that the films are composed by Bi(III), Nb(V), and M(III). CV results show that the electrochemical behavior is attributed only to the semiconductor films which indicate a good coating of the stainless steel support. OCP measurements show that all the films have n-type semiconductor properties and exhibited photoresponse to the visible light irradiation. LSV results show that the application of a potential higher than +0.1 V enhances the photocurrent which can be attributed to an improved charge carrier separation. The results indicate that these materials can be used in photoelectrochemical cells.

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Acknowledgments

This work has been carried out with the financial support of Universidad Industrial de Santander (DIEF Ciencias, Project 5185). J.L. Ropero-Vega thanks COLCIENCIAS for the doctoral scholarship in the frame of the program “Convocatoria nacional para estudios a nivel de doctorado en Colombia—año 2009”. The authors thank Jonathan I. Avila for the XPS analyses.

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Authors and Affiliations

  1. Centro de Investigaciones en Catálisis—CICAT, Centro de Materiales y Nanociencias - CMN, Universidad Industrial de Santander, Sede Guatiguará, Calle 8N No. 3W-60 El Refugio, C.P. 681011, Piedecuesta, Santander, Colombia

    J. L. Ropero-Vega & M. E. Niño-Gómez

  2. Grupo de Investigaciones en Minerales, Biohidrometalurgia y Ambiente—GIMBA, Centro de Materiales y Nanociencias—CMN, Universidad Industrial de Santander, Sede Guatiguará, Calle 8N No. 3W-60 El Refugio, C.P. 681011, Piedecuesta, Santander, Colombia

    A. M. Meléndez & J. A. Pedraza-Avella

  3. Instituto de Química Física de Materiales, Medio Ambiente y Energía—INQUIMAE, Universidad de Buenos Aires, Ciudad Universitaria Pabellón 2, C1428EHA, Buenos Aires, Argentina

    Roberto J. Candal

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  1. J. L. Ropero-Vega
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  2. A. M. Meléndez
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  3. J. A. Pedraza-Avella
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  4. Roberto J. Candal
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  5. M. E. Niño-Gómez
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Correspondence to J. L. Ropero-Vega.

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Ropero-Vega, J.L., Meléndez, A.M., Pedraza-Avella, J.A. et al. Mixed oxide semiconductors based on bismuth for photoelectrochemical applications. J Solid State Electrochem 18, 1963–1971 (2014). https://doi.org/10.1007/s10008-014-2420-4

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