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Morphology-to-properties correlations in anodic porous InP layers

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Abstract

In this paper, we investigate the properties of porous structures anodically grown onto n-InP (100) in HCl. In situ electrochemical characterizations show the pore morphology strongly influences the properties of the InP surfaces. Both dc- and ac-electrochemical measurements reveal an enhancement of the capacitive current and a modification of the electronic distribution at the interface. Photocurrent spectra performed during the pore growth are also strongly modified. For low anodic charges, an increase of the photocurrent with a redshift of the absorption edge is measured. These evolutions can be respectively ascribed (i) to a reflection decrease due to a surface roughening and (ii) to the creation of surface states within the band gap. For higher anodic charges, the photocurrent drops with a narrowing of the spectrum. Using a model based on the “dead” layer, the porous layer is considered as an absorbent film that progressively attenuates the photocurrent of the bulk semiconductor.

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Acknowledgements

The authors are indebted to Dr. Fouad Maroun (Ecole Polytechnique—CNRS) for SEM obsevations. Dr. Nathalie Simon (Université de Versailles Saint Quentin - CNRS) is kindly acknowledged for helpful discussions about concepts of semiconductors’ electrochemistry.

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Authors and Affiliations

  1. Institut Lavoisier de Versailles (UMR 8180), Université de Versailles Saint Quentin - CNRS, 45 avenue des Etats-Unis, 78035, Versailles cedex, France

    Lionel Santinacci, Anne-Marie Gonçalves, Muriel Bouttemy & Arnaud Etcheberry

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  1. Lionel Santinacci
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  2. Anne-Marie Gonçalves
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  3. Muriel Bouttemy
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  4. Arnaud Etcheberry
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Correspondence to Lionel Santinacci.

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Santinacci, L., Gonçalves, AM., Bouttemy, M. et al. Morphology-to-properties correlations in anodic porous InP layers. J Solid State Electrochem 14, 1177–1184 (2010). https://doi.org/10.1007/s10008-009-0942-y

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  • DOI: https://doi.org/10.1007/s10008-009-0942-y

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